Allegro MicroSystems - 2N3819

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Terminal Finish: TIN; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, DEPLETION MODE; JESD-30 Code: R-PDSO-G4; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Maximum Drain Current (ID): .05 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: UNSPECIFIED; Minimum DS Breakdown Voltage: 3 V; No. of Terminals: 4;

SMMBFJ310LT1G by Onsemi is an N-CHANNEL RF Small Signal FET with a max power dissipation of 0.225W and a max operating temperature of 150°C. It is surface mountable and commonly used in junction field effect transistor applications.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Form: THROUGH-HOLE; JESD-30 Code: O-PBCY-T3; Maximum Drain Current (ID): .1 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Case Connection: SOURCE; Terminal Position: DUAL;

RF Small Signal Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: C BAND; No. of Elements: 1; Minimum DS Breakdown Voltage: 15 V;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; JESD-609 Code: e3; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 30 V;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G4; Terminal Form: GULL WING; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Operating Mode: DEPLETION MODE; Terminal Position: DUAL;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 7 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; Qualification: Not Qualified; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Maximum Drain Current (Abs) (ID): .055 A; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Drain Current (ID): .055 A; Maximum Power Dissipation Ambient: .2 W; Maximum Operating Temperature: 125 Cel;