New Jersey Semiconductor Products - BLF246

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Terminal Position: DUAL;

NXP Semiconductors' AFT26H250-24SR6 is an N-CHANNEL RF Power FET with METAL-OXIDE SEMICONDUCTOR tech. It operates up to 225°C, withstands peak reflow at 260°C for 40s. Ideal for high-power RF applications in various industries.

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 17.5 W; Maximum Drain Current (ID): .9 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: ROUND; Terminal Form: FLAT; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 65 V; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: Tin (Sn);

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Form: FLAT; Peak Reflow Temperature (C): 260; Case Connection: SOURCE;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 160 W; Transistor Element Material: SILICON; No. of Elements: 1;

N-CHANNEL; Surface Mount: YES; Package Body Material: UNSPECIFIED; Package Style (Meter): UNCASED CHIP; Qualification: Not Qualified; JESD-30 Code: R-XUUC-N4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 500 V; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 6;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 65 V;

D1008UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 70V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR FET has a max temp of 200°C and comes in a RECTANGULAR package with FLANGE MOUNT style.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Terminal Form: FLAT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: S-PQCC-N12; Maximum Drain Current (ID): 2.5 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 795 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;

PD55015 by STMicroelectronics is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, with a max drain current of 5A and power dissipation of 73W. The transistor has a PLASTIC/EPOXY body, GULL WING terminals, and can withstand up to 165°C operating temperature.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; No. of Elements: 1; JESD-30 Code: R-CDFP-F2;

NXP Semiconductors' AFT20P060-4NR3 is an N-CHANNEL RF Power FET with a max operating temperature of 225°C. It features METAL-OXIDE SEMICONDUCTOR technology and a SINGLE configuration, making it ideal for high-power RF applications in various industries.