National Semiconductor - MPSH10

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MPSH10 by National Semiconductor

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Manufacturer National Semiconductor
Manufacturer's Part Number MPSH10
Description NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
Datasheet MPSH10 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 650 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
JEDEC-95 Code: TO-92
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 60
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 25 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: .7 pF
Maximum VCEsat: .5 V
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