NXP Semiconductors - 934056947115

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .026 A; Maximum Collector-Base Capacitance: .4 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5200 MHz; Maximum Collector Current (IC): .008 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; No. of Elements: 1; Highest Frequency Band: S BAND;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PDSO-G14;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; JEDEC-95 Code: TO-92; Package Style (Meter): CYLINDRICAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .07 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Package Style (Meter): SMALL OUTLINE;

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

The NXP Semiconductors BFU520XRR is a RF BJT transistor with NPN polarity, ideal for amplifier applications in the L band. It has a max operating temperature of 150°C, fT of 10500 MHz, and can handle a collector-emitter voltage of 16V. This small outline transistor features gull wing terminals and is surface mountable.

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; JESD-30 Code: R-PDSO-G6;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .02 A;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector-Emitter Voltage: 20 V; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Transistor Element Material: SILICON; Maximum Collector-Base Capacitance: .9 pF;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Collector Current (IC): .1 A; JEDEC-95 Code: TO-92;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;

NSVMMBTH81LT3G by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the very high frequency band up to 600 MHz with a max VCEsat of 0.5 V. This small outline package has a max collector-emitter voltage of 20V and can handle a collector current of 0.05A, making it suitable for RF signal amplification in various electronic devices.

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Collector Current (IC): .026 A; Minimum DC Current Gain (hFE): 48;