Linear Technology - LT5524EFE#PBF

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 3; Maximum Input Power (CW): 20 dBm; Maximum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Minimum Operating Temperature: 0 Cel; Gain: 7 dB; Construction: COAXIAL; Maximum Voltage Standing Wave Ratio: 2.1; Maximum Input Power (CW): 13 dBm;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: GOLD OVER NICKEL;

RF3931 by Rf Micro Devices is a ceramic module with a wide band high power RF or microwave device type. It has a max input power of 37 dBm and a gain of 15 dB. This amplifier operates within a frequency range of 0 MHz to 3000 MHz and is suitable for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Nickel/Gold (Ni/Au); Maximum Supply Current: 70 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Technology: HYBRID; JESD-609 Code: e3; Maximum Supply Current: 2400 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 10 dBm; Minimum Operating Frequency: 40 MHz;

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;

PMA3-83LNW+ by Mini-circuits is a wide band low power RF amplifier with a gain of 16.9 dB. It operates at frequencies ranging from 400 MHz to 8000 MHz and has a max input power of 16 dBm. This amplifier is commonly used in applications requiring amplification in the RF and microwave range.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; No. of Functions: 1;

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;

HMC342LC4TR by Analog Devices is a wide band low power RF amplifier with 1 function and 24 terminals. It operates at temperatures ranging from -40 to 85°C and requires a power supply of 3V. This ceramic package surface mount device is suitable for RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 105 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;