Mimix Broadband - XL1000-BD-000V

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.145CIR;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Characteristic Impedance: 50 ohm;

WIDE BAND MEDIUM POWER; Gain: 12 dB; Maximum Operating Frequency: 22000 MHz; Maximum Input Power (CW): 27 dBm; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.

RF/Microwave Amplifiers;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

BGA824N6E6327XTSA1 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 17 dB. It operates in the frequency range of 1550 MHz to 1615 MHz and can handle a max input power of 0 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.

WIDE BAND MEDIUM POWER; JESD-609 Code: e0; Minimum Operating Frequency: 50 MHz; Maximum Voltage Standing Wave Ratio: 1.22; Construction: COMPONENT; Maximum Operating Frequency: 1000 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Technology: PHEMT; Power Supplies (V): 5; Gain: 17 dB;

NARROW BAND MEDIUM POWER; Minimum Operating Frequency: 2200 MHz; Characteristic Impedance: 50 ohm; JESD-609 Code: e3; Gain: 17 dB; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC797LP5E is a wide band medium power RF amplifier with 11 dB gain and 23 dBm CW input power. Operating from -55 to 85°C, it covers frequencies from 0 to 22 GHz. With a VSWR of 7, this GaAs component is ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 13500 MHz;

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 5500 MHz;

HMC460LC5TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;