Texas Instruments - 1N5725

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Infrared (IR) Range: YES; Maximum Dark Current: 25 nA; Maximum Operating Temperature: 125 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 300 nA; Minimum Operating Temperature: -55 Cel; JESD-609 Code: e0;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel;

PHOTO DARLINGTON; Shape: ROUND; Nominal Light Current: 12 mA; No. of Functions: 1; Configuration: SINGLE; Size: 4.69 mm;

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 4.7 mm; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Response Time: .000008 s;

Osram Opto Semiconductors' BPY62-3/4 is an 830nm peak wavelength phototransistor with a max temp of 125°C. It has a nominal light current of 5.8mA and max response time of 0.000007s. Ideal for applications requiring IR detection, it features through-hole mounting and can handle up to 0.1A on-state current.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel; Maximum Response Time: .000022 s;

QSB363GR by Onsemi is a single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Maximum On State Current: .05 A; Maximum Power Dissipation: .1 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Terminal Finish: TIN SILVER COPPER; Maximum Operating Temperature: 85 Cel; Size: 1.4 mm; Peak Wavelength (nm): 600; Minimum Collector-emitter Breakdown Voltage: 20 V;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -25 Cel; Maximum Dark Current: 1000 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); Peak Wavelength (nm): 850; JESD-609 Code: e2; Minimum Collector-emitter Breakdown Voltage: 32 V;

PHOTO DARLINGTON; Minimum Operating Temperature: 0 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Maximum Dark Current: 250 nA; Shape: ROUND; Maximum Operating Temperature: 70 Cel;

PHOTO DARLINGTON; Nominal Light Current: .6 mA; No. of Functions: 1; Shape: ROUND; Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; SIDE VIEW;

PHOTO TRANSISTOR; Nominal Light Current: .01 mA; Configuration: SINGLE; Infrared (IR) Range: NO; No. of Functions: 1; Minimum Operating Temperature: -25 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 780; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;