Everlight Electronics - EL121N(BC)(TA)-V

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 570; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .02 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Terminal Finish: PURE TIN OVER NICKEL; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Nominal Light Current: .016 mA; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00001 s; Maximum On State Current: .05 A; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -60 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Peak Wavelength (nm): 880; Maximum Operating Temperature: 75 Cel; Maximum Power Dissipation: .07 W;

Vishay Intertechnology's VEMT2520X01 is a 1.8mm phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and nominal light current of 6mA. Ideal for applications requiring IR detection in compact setups using surface mount technology.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 125 Cel; Peak Wavelength (nm): 900; Minimum Operating Temperature: -60 Cel;

PHOTO TRANSISTOR; Additional Features: SIDE VIEW; Shape: ROUND; Peak Wavelength (nm): 870; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Infrared (IR) Range: YES; Nominal Light Current: 7 mA; Maximum Dark Current: 100 nA; Shape: ROUND;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum Power Dissipation: .15 W; Maximum Response Time: .000014 s;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W; Maximum Dark Current: 100 nA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .075 W; Maximum Dark Current: 100 nA; Maximum Operating Temperature: 85 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .05 W; Peak Wavelength (nm): 900;

PHOTO TRANSISTOR; Configuration: SINGLE; Size: 4.7 mm; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 820; Maximum Dark Current: 40 nA; Maximum Operating Temperature: 85 Cel; Maximum On State Current: .0001 A;

OP505A by Tt Electronics Plc is a single configuration phototransistor with a size of 3.05 mm. It operates at temperatures ranging from -40 to 100 °C and has a peak wavelength of 930 nm. This optoelectronic component is commonly used in applications requiring infrared detection and through hole mounting.

PHOTO TRANSISTOR; Minimum Operating Temperature: -25 Cel; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Size: 1.5 mm; Peak Wavelength (nm): 820;