Freescale Semiconductor - AFT05MS004NT1

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 133 V; Moisture Sensitivity Level (MSL): 3; JESD-30 Code: R-PDFM-F4;

NXP's MRF6V10010NR4 is a single N-channel RF FET with 100V DS breakdown voltage, ideal for amplifier applications in L Band. It features a plastic/epoxy package, operates in enhancement mode at up to 200°C, and has a moisture sensitivity level of 3.

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 12 A; Package Shape: RECTANGULAR;

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Operating Temperature: 200 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V; Terminal Finish: GOLD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-CDFP-F2; Package Style (Meter): FLATPACK;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Package Style (Meter): FLANGE MOUNT; Maximum Drain Current (ID): 20 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-PDSO-N6; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Style (Meter): SMALL OUTLINE;

N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 68 V; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Maximum Drain Current (ID): .25 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Peak Reflow Temperature (C): 260; Terminal Form: FLAT;

RF Power Field-Effect Transistors;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Terminal Position: DUAL; Transistor Element Material: GALLIUM NITRIDE;