Texas Instruments - TIL611

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Configuration: SINGLE; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Size: 1.58 mm;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; JESD-609 Code: e0; Nominal Light Current: .016 mA;

PHOTO DARLINGTON; Maximum Operating Temperature: 75 Cel; Minimum Collector-emitter Breakdown Voltage: 30 V; Peak Wavelength (nm): 870; Additional Features: HIGH SENSITIVITY; SIDE VIEW; No. of Functions: 1;

Osram Opto SFH3710-3/4 is a single phototransistor with peak wavelength of 570nm. It operates b/w -40 to 85°C, with max on-state current of 0.02A. Ideal for surface mount applications requiring light sensing in the range of 0.004mA to 50nA dark current.

PHOTO TRANSISTOR; Peak Wavelength (nm): 850; Size: 3.9 mm; Infrared (IR) Range: YES; Nominal Light Current: 1.2 mA; Minimum Collector-emitter Breakdown Voltage: 70 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .5 mA; Peak Wavelength (nm): 900; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V;

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Additional Features: HIGH SENSITIVITY, DAY LIGHT FILTER; Shape: ROUND;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .05 A; Maximum Response Time: .000007 s; Peak Wavelength (nm): 880;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Shape: ROUND; Maximum Operating Temperature: 100 Cel; Minimum Collector-emitter Breakdown Voltage: 35 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -55 Cel; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .125 W; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Size: 1.52 mm; Minimum Operating Temperature: -65 Cel; Nominal Light Current: .6 mA; Peak Wavelength (nm): 890;

PHOTO DARLINGTON; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Collector-emitter Breakdown Voltage: 20 V; Additional Features: HIGH SENSITIVITY; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR; Minimum Operating Temperature: -20 Cel; Nominal Light Current: .042 mA; No. of Functions: 1; Shape: ROUND; Maximum Operating Temperature: 75 Cel;

TEPT5600 by Vishay Intertechnology is a 5mm round phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, has a collector-emitter breakdown voltage of 6V, and can handle max on state current of 0.02A. Ideal for optoelectronic applications requiring precise light detection in various environments.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Additional Features: HIGH SENSITIVITY; Maximum Dark Current: 100 nA; Configuration: SINGLE;

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 840; Maximum Dark Current: 50 nA; Maximum On State Current: .02 A;

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: YES; Minimum Operating Temperature: -25 Cel; No. of Functions: 1; Nominal Light Current: 1.5 mA;