Broadcom - MGA-53543-BLKG

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Gain: 11 dB; JESD-609 Code: e3; Minimum Operating Frequency: 0 MHz; Terminal Finish: Matte Tin (Sn); Maximum Operating Frequency: 4000 MHz;

WIDE BAND LOW POWER; Minimum Operating Frequency: 5000 MHz; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; Maximum Operating Frequency: 20000 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 30 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;

HMC637ALP5E by Analog Devices is a wide band medium power RF amplifier with a gain of 12 dB. It has a max input power of 25 dBm and operates in temperatures ranging from -40 to 85°C. This component is suitable for applications requiring amplification in the frequency range of 0-6000 MHz.

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn) - annealed;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

WIDE BAND HIGH POWER;

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.

WIDE BAND LOW POWER; Gain: 12 dB; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 40000 MHz; Additional Features: LOW NOISE;

Mini-circuits' PHA-13LN+ is a wideband low power RF amplifier with 20.2 dB gain, suitable for frequencies ranging from 1 MHz to 1000 MHz. It can handle up to 8 dBm CW input power and operates b/w -40°C to 105°C, making it ideal for various RF and microwave applications.

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Maximum Operating Temperature: 50 Cel; Maximum Input Power (CW): 13 dBm; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz; Minimum Operating Frequency: 10 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Gain: 17.5 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE, HIGH RELIABILITY;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAN; No. of Functions: 1;