Hittite Microwave - HMC517LC4

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Minimum Operating Frequency: 50 MHz; Minimum Operating Temperature: -40 Cel;

Analog Devices' MAX2659ELT+T is a BICMOS RF amplifier with 1.8/3V supplies, 6 terminals, and 5.6mA max supply current. It operates b/w -40°C to 85°C, features gold nickel terminal finish, and is ideal for surface mount applications in RF & microwave circuits.

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn) - annealed;

WIDE BAND LOW POWER; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Additional Features: LOW NOISE; Characteristic Impedance: 50 ohm;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 4000 MHz;

Qorvo's QPA2612TR7 is a GAN technology RF amplifier with 34.2 dB gain, operating from 8-12 GHz. It offers 21 dBm CW input power handling and VSWR of 4, suitable for wideband high-power applications in RF & microwave systems. The component has 24 terminals and surface-mounting feature in a plastic/epoxy package body.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Technology: PHEMT; Power Supplies (V): 5; Maximum Voltage Standing Wave Ratio: 1.25;

NXP Semiconductors' BGU8009,115 is a RF & Microwave Amplifier with 6 terminals and PLASTIC/EPOXY package. It operates b/w -40 to 85 °C with power supplies of 1.8/2.85 V. Ideal for surface mount applications in various electronic devices.

Analog Devices' HMC636ST89TR is a GaAs RF amplifier with 5V power supply, operating from -40 to 85°C. It features wideband low power design in a surface-mount package, ideal for RF and microwave applications requiring high performance in compact setups.

AMF-4F-02200230-15-13P by L-3 Narda-miteq is a COAXIAL RF amplifier with 58 dB Gain, VSWR of 1.5, operating from 2200 MHz to 2300 MHz. Ideal for narrowband low-power applications in RF & Microwave systems.

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Characteristic Impedance: 50 ohm;

Qorvo's TGA2214 is a wide band high power RF amplifier with 22 dB gain, operating from 2-18 GHz. It can handle up to 31 dBm CW input power and operates in temperatures ranging from -40 to 85°C. Ideal for applications requiring high power amplification in RF and microwave systems.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 11 dB;

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Frequency: 17000 MHz; Construction: COMPONENT; Gain: 19 dB; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 6000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Additional Features: LOW NOISE, HIGH RELIABILITY;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 3;

WIDE BAND HIGH POWER; Maximum Voltage Standing Wave Ratio: 10; Maximum Input Power (CW): 30 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 50 MHz; Construction: COMPONENT;

WIDE BAND LOW POWER; JESD-609 Code: e3; Maximum Operating Temperature: 85 Cel; Gain: 4.5 dB; Minimum Operating Temperature: -40 Cel; Terminal Finish: MATTE TIN;