Analog Devices - MAX2630EUS+T

Qorvo's CMD283C3 is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 2-6 GHz, handles up to 20 dBm CW input power, and has a temperature range of -40 to 85°C. Ideal for RF & microwave applications requiring high performance in compact designs.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: E-PHEMT; Maximum Input Power (CW): 22 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 13 dBm;

WIDE BAND LOW POWER; Maximum Voltage Standing Wave Ratio: 1.8; Gain: 4.5 dB; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 3000 MHz; Minimum Operating Temperature: -40 Cel;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Power Supplies (V): 28;

WIDE BAND HIGH POWER; Characteristic Impedance: 50 ohm; Gain: 19 dB; Maximum Input Power (CW): 33 dBm; Maximum Operating Frequency: 2500 MHz; Construction: COMPONENT;

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;

WIDE BAND LOW POWER;

ADL8107ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 18dB gain, operating from 6-18GHz. It has a max input power of 22dBm and VSWR of 1.54, suitable for wideband low-power applications in RF & microwave systems. With surface mount construction and 8 terminals, it operates b/w -40 to 85°C with a +5V supply.

WIDE BAND MEDIUM POWER; Maximum Input Power (CW): 8 dBm; Gain: 14 dB; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 7;

NARROW BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

NARROW BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2200 MHz; Terminal Finish: Matte Tin (Sn) - annealed; Maximum Operating Frequency: 2800 MHz; Construction: COMPONENT;

HMC797APM5E by Analog Devices is a wide band medium power RF amplifier with 13 dB gain and 27 dBm max input power. With a VSWR of 7, it operates from 0 to 22000 MHz, making it ideal for high-frequency applications in RF and microwave systems. The component has a temperature range of -40 to 85°C and features nickel palladium gold terminal finish.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;

NARROW BAND LOW POWER; Terminal Finish: TIN LEAD; Maximum Voltage Standing Wave Ratio: 1.65; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; JESD-609 Code: e0;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 9 dB;

The NXP Semiconductors BGU8009 is a narrow band low power RF amplifier with a gain of 17.6 dB, operating b/w 1559-1610 MHz. It can handle up to 10 dBm CW input power and has an impedance of 50 ohm. Ideal for RF and microwave applications requiring high gain amplification in a compact form factor.

WIDE BAND LOW POWER; Minimum Operating Frequency: 100 MHz; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Maximum Voltage Standing Wave Ratio: 2; Maximum Input Power (CW): 13 dBm;

WIDE BAND LOW POWER; Construction: COMPONENT; Gain: 17 dB; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 18 dBm;