Mini-circuits - PHA-102+

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

NARROW BAND HIGH POWER;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 8 dB; JESD-609 Code: e3;

The Qorvo TQP3M9018 is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, handling up to 23 dBm CW input power. This component is ideal for applications requiring high frequency amplification in plastic/epoxy packages.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Minimum Operating Frequency: 100 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 85 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 24000 MHz; Maximum Operating Frequency: 34000 MHz; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 7;

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND MEDIUM POWER; Maximum Operating Frequency: 29500 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 24000 MHz; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Gain: 20.5 dB;

MGA-86563-TR1G by Broadcom is a wide band low power RF amplifier with a gain of 13.7 dB. It operates at frequencies ranging from 500 MHz to 6000 MHz and can handle a max input power of 13 dBm. This surface mount component is commonly used in RF and microwave applications requiring amplification within the specified frequency range.

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

NARROW BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 20 dBm; No. of Functions: 1;

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 15 dBm; Maximum Operating Frequency: 8000 MHz;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Matte Tin (Sn);

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;