Agilent Technologies - MGA-86576-STRG

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 400 MHz; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 27 dBm; Maximum Operating Frequency: 4000 MHz; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 6500 MHz;

Analog Devices' HMC462LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating from -40 to 85°C. It requires a 5V power supply, drawing a max of 84mA. This wideband low-power device is ideal for surface mount applications in RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 10;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 26500 MHz; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 0 dBm;

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;

Broadcom's MGA-31689-BLKG is a GAAS RF amplifier with 16.6 dB gain, operating from 1500 to 3000 MHz. It has a max input power of 15 dBm and requires a 5V power supply. This wide band medium power device is ideal for applications requiring surface mount construction in RF & microwave systems.

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 6;

WIDE BAND LOW POWER; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Input Power (CW): 5 dBm; Maximum Operating Frequency: 3600 MHz; Characteristic Impedance: 50 ohm; Gain: 15.5 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 70 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Minimum Operating Frequency: 1500 MHz;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 6 dBm; Minimum Operating Frequency: 10 MHz;

NXP Semiconductors' BGA2003T/R is a wide band low power RF amplifier with 16 dB gain, operating from 900 MHz to 1800 MHz. Ideal for RF applications requiring a 50 ohm impedance, this component offers high performance in amplifying signals within the specified frequency range.

RF/Microwave Amplifiers;

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

WIDE BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 0 MHz; Gain: 10.1 dB; Maximum Input Power (CW): 24 dBm;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Minimum Operating Frequency: 10 MHz; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 800 MHz;