Broadcom - MGA-86576-TR1

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 10 dB;

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 28000 MHz; Minimum Operating Frequency: 24000 MHz; Maximum Input Power (CW): -5 dBm; Terminal Finish: GOLD OVER NICKEL;

WIDE BAND LOW POWER; Maximum Input Power (CW): 13 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8000 MHz; Characteristic Impedance: 50 ohm; Gain: 20 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Frequency: 40 MHz;

WIDE BAND HIGH POWER; JESD-609 Code: e3; Maximum Input Power (CW): 42 dBm; Maximum Voltage Standing Wave Ratio: 10; Terminal Finish: Tin (Sn); Gain: 29 dB;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 400 MHz; Maximum Operating Frequency: 470 MHz; Minimum Operating Temperature: -30 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TSSOP6,.08;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Voltage Standing Wave Ratio: 2; Gain: 15.5 dB; Construction: COMPONENT;

Qorvo's QPA1003P is a GAN RF amplifier with 31.4 dB gain, operating from 1-8 GHz. It handles up to 18 dBm CW input power, VSWR of 3, and requires 28V supply. Ideal for wideband high-power applications in RF & microwave systems.

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 5 dBm; Additional Features: HIGH RELIABILITY; Maximum Operating Frequency: 2484 MHz; Gain: 29 dB; Maximum Operating Temperature: 85 Cel;

Analog Devices' HMC994APM5E is a wide band medium power RF amplifier with 13 dB gain and 25 dBm CW input power. With a VSWR of 7, it operates from -40°C to 85°C, covering frequencies from 0 MHz to 28 GHz. Ideal for RF and microwave applications requiring high performance amplification in various environments.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

HMC516LC5 by Analog Devices is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 9-18 GHz, with a max input power of 5 dBm. Ideal for RF & microwave applications requiring high performance in a compact ceramic package.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Supply Current: 20 mA;

The NXP Semiconductors BGU8103X is a RF & Microwave Amplifier with 10 dBm CW input power, 1.78 max VSWR, and 14.5 dB gain. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and is suitable for narrow band low power applications in the frequency range of 1559-1610 MHz.

Sirenza Microdevices' SBB-2089Z is a GAAS RF amplifier with 18.5 dB gain, operating from 50 MHz to 850 MHz. It has a max input power of 12 dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can operate in temperatures ranging from -40°C to 85°C.