ROHM - 2SC4082T106P

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: COMPLEX; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: THROUGH-HOLE;

BFG425W,115 by NXP Semiconductors is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is designed for switching applications in the L Band frequency range up to 25 GHz. This surface mount transistor has a max power dissipation of 0.135 W and can handle a max collector current of 0.03 A.

Renesas Electronics' HFA3134IHZ96 is an NPN RF BJT with 2 elements, ideal for amplifier applications in the UHF band. Features include VCEsat of 0.25V, hFE of 48, and fT of 3000MHz. With a max operating temp of 85°C and compact SOT package, it's suitable for high-frequency circuit designs.

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Power Dissipation (Abs): .625 W; JESD-30 Code: O-PBCY-T3;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 550 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PDSO-G14;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .07 A;

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 6;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .05 A;

BFR92PE6327 by Infineon Technologies is a NPN RF BJT transistor with a max operating temperature of 150°C. It has a transition frequency of 5000 MHz and can handle a collector current of 0.03 A, making it ideal for L Band switching applications. This surface mount transistor comes in a small outline package with gull wing terminals.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A; JESD-30 Code: O-MBCY-W4;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 850 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .03 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .025 A; Transistor Element Material: SILICON;

The Onsemi KSP10BU is an NPN RF BJT with a max fT of 650 MHz and hFE of 60. It operates at up to 150°C, has VCEO of 25V, and CCB of 0.7pF. Commonly used in ultra-high frequency applications due to its high transition frequency and low collector-base capacitance.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;