MASK ROM

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KM23C64000BG-10	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		4MX16	4M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	4.5 V	CONFIGURABLE AS 4M X 16	e0			.0001 Amp	28.5 mm	100 ns
KM23C16000CET-10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words	5	5	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel		2MX8	2M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	CONFIGURABLE AS 1M X 16	e0			.00005 Amp	18.41 mm	100 ns
KM23C4100AG-15	Samsung	MASK ROM	COMMERCIAL	40	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	SMALL OUTLINE	SOP40,.56	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G40		5.5 V	2.8 mm	10.67 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	26.2 mm	150 ns
K3P5C1000D-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	1048576 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	16777216 bit	4.5 V	ALSO CONFIGURABLE AS 1M X 16	e0			.00005 Amp	18.41 mm	100 ns
K3N6C1000E-TC120	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		2097152 words	5		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		2MX16	2M	0 Cel		DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V			30	240		18.41 mm	120 ns
KM23C4000H-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	100 ns
KM23V16005D-10	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V	CAN ALSO BE OPERATED IN 3V TO 3.6V					52.42 mm	100 ns
K3N5U1000D-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
K3P5V1000D-DC	Samsung
KM23C8000-20	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	41.91 mm	200 ns
KM23C2100H-15	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	8	IN-LINE	DIP40,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	256KX8	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	2097152 bit	4.5 V		e0			.00005 Amp	52.43 mm	150 ns
K3P5V1000F-GC120	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	SMALL OUTLINE		8		1.27 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDSO-G44		3.6 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	3 V			30	225		28.5 mm	120 ns
K3N3U1000D-DC12	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	20 mA	262144 words	3	3	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.3 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	52.42 mm	120 ns
KM23C1010G-15	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	131072 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	128KX8	128K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	1048576 bit	4.5 V		e0			.0001 Amp	20.47 mm	150 ns
K3N4U1000D-TC120	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3		16	SMALL OUTLINE, THIN PROFILE		8		.8 mm	70 Cel		512KX16	512K	0 Cel		DUAL	R-PDSO-G44		3.3 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	2.7 V			30	240		18.41 mm	120 ns
K3P6V1000D-YE10	Samsung	MASK ROM	OTHER	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	4194304 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.71,20	8	MASK ROMs	.5 mm	85 Cel		4MX8	4M	-20 Cel	TIN LEAD	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	33554432 bit	3 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00003 Amp	16.4 mm	100 ns
KM23V8105DET-10	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	40 mA	524288 words	3.3	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel		512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V		e0			.00003 Amp	18.41 mm	100 ns
K3N3C1000D-DC100	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		262144 words	5		16	IN-LINE		8		2.54 mm	70 Cel		256KX16	256K	0 Cel		DUAL	R-PDIP-T40		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V			NOT SPECIFIED	NOT SPECIFIED		52.43 mm	100 ns
K3N3C3000D-DC08	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V	TTL COMPATIBLE I/O	e0			.00005 Amp	41.91 mm	80 ns
K3P4U1000E-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	35 mA	524288 words	3	3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V		e0			.00003 Amp	52.42 mm	120 ns
K3N7V1000C-YC120	Samsung	MASK ROM	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		4194304 words	3.3		16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	70 Cel		4MX16	4M	0 Cel		DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	67108864 bit	3 V			30	240		16.4 mm	120 ns
K3P6C1000B-GC12	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	2097152 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	33554432 bit	4.5 V	ALSO CONFIGURABLE AS 2M X 16	e0			.00005 Amp	28.5 mm	120 ns
K3P5V1000D-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	3.3	3.3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		1MX16	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V		e0			.00003 Amp	52.42 mm	120 ns
K3P5U1000D-GC	Samsung
KM23C16000AG-20	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	5	5	8	SMALL OUTLINE	SOP44,.63	16	MASK ROMs	1.27 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	16777216 bit	4.5 V		e0			.00005 Amp	28.5 mm	200 ns
K3P4C1000D-GC	Samsung
KM23V4100D-10	Samsung	MASK ROM	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	262144 words	3.3	3.3	16	IN-LINE	DIP40,.6	8	MASK ROMs	2.54 mm	70 Cel		256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40		3.6 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	3 V	CONFIGURABLE AS 256K X 16	e0			.00003 Amp	52.42 mm	100 ns
KM23C8000B-10	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	41.91 mm	100 ns
K3N4C3000D-GC12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel		1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V	TTL COMPATIBLE I/O	e0			.00005 Amp	20.47 mm	120 ns
K3P4C1000D-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	80 mA	524288 words	5	5	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	52.42 mm	120 ns
KM23C64005BG-10	Samsung	MASK ROM	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	4194304 words	5	5	16	SMALL OUTLINE	SOP44,.63	8	MASK ROMs	1.27 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	3.1 mm	12.6 mm	Not Qualified	67108864 bit	4.5 V	CONFIGURABLE AS 4M X 16	e0			.0001 Amp	28.5 mm	100 ns
KM23C8000AG-20	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	8388608 bit	4.5 V		e0			.00005 Amp	20.47 mm	200 ns
K3N3V3000D-GC10	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS		524288 words	3.3		8	SMALL OUTLINE				1.27 mm	70 Cel		512KX8	512K	0 Cel		DUAL	R-PDSO-G32		3.6 V	3 mm	11.43 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O					20.47 mm	100 ns
KM23C4000H-12	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	60 mA	524288 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	4.5 V		e0			.00005 Amp	41.91 mm	120 ns
K3N3V3000D-AC85	Samsung	MASK ROM	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3.3	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		MASK ROMs	.5 mm	70 Cel		512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		3.6 V	1.2 mm	8 mm	Not Qualified	4194304 bit	3 V	TTL COMPATIBLE I/O	e0			.00003 Amp	11.8 mm	85 ns
K3N5V1000E-DC120	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		1048576 words	3.3		16	IN-LINE		8		2.54 mm	70 Cel		1MX16	1M	0 Cel		DUAL	R-PDIP-T42		3.6 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		52.42 mm	120 ns
KM23V8100CT-25	Samsung	MASK ROM	COMMERCIAL	44	TSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING			30 mA	524288 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44	3				Not Qualified	8388608 bit			e0			.00005 Amp		250 ns
K3N4U1000D-DC12	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	25 mA	524288 words	3	3	16	IN-LINE	DIP42,.6	8	MASK ROMs	2.54 mm	70 Cel		512KX16	512K	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	2.7 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	52.42 mm	120 ns
KM23C64000T-15	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	70 mA	4194304 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		4MX16	4M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	67108864 bit	4.5 V	CONFIGURABLE AS 4M X 16	e0			.00005 Amp	18.41 mm	150 ns
K3P6V1000B-TC12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	60 mA	2097152 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	3 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00003 Amp	18.41 mm	120 ns
KM23V4001B-30	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3	3/3.3	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		3.3 V	5.08 mm	15.24 mm	Not Qualified	4194304 bit	2.7 V		e0			.03 Amp	41.91 mm	300 ns
KM23V16000A-35	Samsung	MASK ROM	COMMERCIAL	42	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	30 mA	2097152 words	3	3/3.3	8	IN-LINE	DIP42,.6	16	MASK ROMs	2.54 mm	70 Cel	3-STATE	2MX8	2M	0 Cel	TIN LEAD	DUAL	R-PDIP-T42		3.3 V	5.08 mm	15.24 mm	Not Qualified	16777216 bit	2.7 V		e0			.00005 Amp	52.43 mm	350 ns
K3N4V1000D-TC10	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	524288 words	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		512KX16	512K	0 Cel	TIN LEAD	DUAL	R-PDSO-G44		3.6 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	3 V	CONFIGURABLE AS 512K X 16	e0			.00003 Amp	18.41 mm	100 ns
K3N4C1000D-TE15	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	524288 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel		512KX16	512K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	8388608 bit	4.5 V	CONFIGURABLE AS 512K X 16	e0			.00005 Amp	18.41 mm	150 ns
KM23C32005BT-12	Samsung	MASK ROM	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	150 mA	2097152 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	70 Cel		2MX16	2M	0 Cel	Tin/Lead (Sn/Pb)	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	33554432 bit	4.5 V	CONFIGURABLE AS 2M X 16	e0			.00005 Amp	18.41 mm	120 ns
K3N3C1000D-TE12	Samsung	MASK ROM	OTHER	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	50 mA	262144 words	5	5	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	8	MASK ROMs	.8 mm	85 Cel		256KX16	256K	-20 Cel	TIN LEAD	DUAL	R-PDSO-G44		5.5 V	1.2 mm	10.16 mm	Not Qualified	4194304 bit	4.5 V	ALL INPUTS AND OUTPUTS TTL COMPATIBLE	e0			.00005 Amp	18.41 mm	120 ns
KM23C8001A-15	Samsung	MASK ROM	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words	5	5	8	IN-LINE	DIP32,.6		MASK ROMs	2.54 mm	70 Cel	3-STATE	1MX8	1M	0 Cel	TIN LEAD	DUAL	R-PDIP-T32		5.5 V	5.08 mm	15.24 mm	Not Qualified	8388608 bit	4.5 V		e0			.05 Amp	41.91 mm	150 ns
KM23C256G-12	Samsung	MASK ROM	COMMERCIAL	32	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	30 mA	32768 words	5	5	8	SMALL OUTLINE	SOP32,.56		MASK ROMs	1.27 mm	70 Cel	3-STATE	32KX8	32K	0 Cel	TIN LEAD	DUAL	R-PDSO-G32		5.5 V	3 mm	11.43 mm	Not Qualified	262144 bit	4.5 V		e0			.0001 Amp	20.47 mm	120 ns

MASK ROM

Mask ROM, or Read-Only Memory, is a type of non-volatile computer memory that is programmed during the manufacturing process. Mask ROM is designed to permanently store data and cannot be reprogrammed after it has been manufactured.

Mask ROM is created by a process known as photolithography. This process involves using a mask, or template, to expose specific areas of a silicon wafer to ultraviolet light. The areas that are exposed to the light are then etched away, leaving behind the patterns that make up the memory cells. Once the memory cells have been created, they are permanently programmed with the data that they will store.

Mask ROM is commonly used in devices that require permanent storage of data, such as game consoles, calculators, and other electronic devices. Because the data is permanently programmed during manufacturing, mask ROM provides a reliable and secure way to store critical data, such as system settings, firmware, and other important information.

One of the advantages of using mask ROM is that it is a cost-effective way to produce large quantities of memory. Because the data is programmed during the manufacturing process, the cost per unit is relatively low compared to other types of non-volatile memory, such as EEPROM or flash memory.