STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F221-120YN5TR	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256KX8	256K	-20 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M58BW032DT45T6T	STMicroelectronics	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,2K,16K		1048576 words	3.3	NO	3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		1MX32	1M	-40 Cel	4,8,62	YES			QUAD	R-PQFP-G80	3.6 V	3.4 mm		14 mm	Not Qualified	TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE; TOP BOOT BLOCK	4				NOR TYPE	.0001 Amp	20 mm	YES	45 ns	3.3	NO
M29W160T100GJ1	STMicroelectronics
M28F211-80N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		256KX8	256K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL	R-PDSO-G40			100000 Write/Erase Cycles		Not Qualified	TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			80 ns		NO
M29F100BT90M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	65536 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	TOP	1048576 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F200T-90N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel	3-STATE	128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		90 ns	5	YES
M28W320CB90ZB1T	STMicroelectronics	FLASH	COMMERCIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	70 Cel		2MX16	2M	0 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B47	3.6 V	1.2 mm		6.39 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	10.5 mm	YES	90 ns	3	NO
M29W200BB120M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	2097152 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		90 ns	2.7	YES
M29W200BT90N6F	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	TIN/TIN BISMUTH	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	2097152 bit	2.7 V	TOP BOOT BLOCK		e3/e6	40	260	NOR TYPE	.0001 Amp	20 mm		90 ns	2.7	YES
M29W040B120K6	STMicroelectronics	FLASH	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	3.3	YES	3/3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	85 Cel		512KX8	512K	-40 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.43 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.0001 Amp	13.97 mm		90 ns	2.7	YES
M29F102B-120N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	70 Cel	3-STATE	1MX16	1M	0 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	4.5 V			e0			NOR TYPE	.0001 Amp	12.4 mm		120 ns	5	YES
M29F200BT70MT6F	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm	100000 Write/Erase Cycles	12.6 mm	Not Qualified	TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			40	245	NOR TYPE	.0001 Amp	28.5 mm		70 ns	5	YES
M29W800DXT55ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified	TOP	8388608 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	9 mm	YES	55 ns	3	YES
M29W040-100NZ5TR	STMicroelectronics	FLASH	OTHER	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	3 V			e0			NOR TYPE	.000005 Amp	12.4 mm		100 ns	3	YES
M58BW016DT100ZA6F	STMicroelectronics	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B80	3.6 V	1.7 mm		10 mm	Not Qualified	TOP	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE	.000005 Amp	12 mm	YES	100 ns	3	NO
M29F080A70M1T	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	1048576 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63		Flash Memories		1.27 mm	70 Cel		1MX8	1M	0 Cel	16	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified		8388608 bit	4.5 V			e3			NOR TYPE	.00015 Amp	28.2 mm		70 ns	5	YES
M29W641DH70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4MX16	4M	0 Cel			TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		67108864 bit	3 V			e3			NOR TYPE		18.4 mm		70 ns	3
M58CR032C120ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	2097152 words	1.8	NO	1.8,1.8/3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B56	2 V	1.2 mm		6.5 mm	Not Qualified	TOP	33554432 bit	1.65 V		4	e1			NOR TYPE	.000005 Amp	10 mm	YES	120 ns	1.8	NO
M29W400DB70M6	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	3	YES
M29R008T-200N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G40	3.6 V	1.2 mm		10 mm	Not Qualified		8388608 bit	1.8 V						NOR TYPE		18.4 mm		200 ns	3
M28F102-120N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	3-STATE	64KX16	64K	0 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified		1048576 bit	4.5 V						NOR TYPE		12.4 mm		120 ns	12
M29F002BNB55N1	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel		256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		55 ns	5	YES
M59MR032C100ZC6	STMicroelectronics	FLASH	INDUSTRIAL	54	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	2097152 words	1.8	YES	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA54,10X12,40/20		Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM	R-PBGA-B54	2 V	1.2 mm		7 mm	Not Qualified	TOP	33554432 bit	1.65 V		4				NOR TYPE	.000005 Amp	12 mm	YES	14 ns	1.8	YES
M29F105B-70XN6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			65536 words	5			16	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		64KX16	64K	-40 Cel					DUAL	R-PDSO-G40	5.25 V	1.2 mm		10 mm	Not Qualified	BOTTOM	1048576 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; BOTTOM BOOT BLOCK; BLOCK ERASE					NOR TYPE		12.4 mm		70 ns	5
M29W160DT90ZA1E	STMicroelectronics	FLASH	COMMERCIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	70 Cel		1MX16	1M	0 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		8 mm	Not Qualified	TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE		9 mm		90 ns	3
M28F161-100N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	3-STATE	2MX8	2M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		16777216 bit	3 V	10K ERASE/PROGRAM CYCLES PER SECTOR					NOR TYPE		18.4 mm		100 ns	12
M28F420-120XM3	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	35 mA	524288 words	5	NO	5	8	SMALL OUTLINE	SOP44,.63	16	Flash Memories		1.27 mm	125 Cel		512KX8	512K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL	R-PDSO-G44	5.25 V	2.62 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	4194304 bit	4.75 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.00005 Amp	28.2 mm		120 ns	12	NO
M28F220-100YM3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE					1.27 mm	125 Cel		256KX8	256K	-40 Cel					DUAL	R-PDSO-G44	5.5 V	2.62 mm		13.3 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		100 ns	12
M29F040-90XK1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES	TIN LEAD		QUAD	R-PQCC-J32	5.25 V	3.56 mm	100000 Write/Erase Cycles	11.455 mm	Not Qualified		4194304 bit	4.75 V			e0			NOR TYPE	.0001 Amp	13.995 mm		90 ns	5	YES
M29W040-120NZ6	STMicroelectronics	FLASH	INDUSTRIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.56,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-40 Cel	8	YES	TIN LEAD		DUAL	R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles	8 mm	Not Qualified		4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	12.4 mm		120 ns	3	YES
M29W040-100K1TR	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel	3-STATE	512KX8	512K	0 Cel	8	YES	MATTE TIN		QUAD	R-PQCC-J32	3.6 V	3.56 mm	100000 Write/Erase Cycles	11.4554 mm	Not Qualified		4194304 bit	3 V			e3			NOR TYPE	.000005 Amp	13.65 mm		100 ns	3	YES
M29W800AB120M1	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	20	1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles	13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	20 YEARS DATA RETENTION; BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm		120 ns	2.7	YES
M29DW640F70N1	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel		4MX16	4M	0 Cel			TIN LEAD		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e0			NOR TYPE		18.4 mm		70 ns	3
M28F151-90K3	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL			30 mA	196608 words	5	NO	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel		192KX8	192K	-40 Cel		YES	TIN LEAD		QUAD	R-PQCC-J32					Not Qualified		1572864 bit				e0			NOR TYPE	.0001 Amp			90 ns		NO
M29R800B-100N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			8	SMALL OUTLINE, THIN PROFILE		16			.5 mm	85 Cel	3-STATE	1MX8	1M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V						NOR TYPE		18.4 mm		100 ns	3
M29W800DB70M1F	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	28.2 mm	YES	70 ns	3	YES
M28F411-120YN6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE				20	.5 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	TOP	4194304 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; 20 YEARS DATA RETENTION; BOOT BLOCK					NOR TYPE		18.4 mm		120 ns	12
M29F160BT55N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		1MX16	1M	0 Cel	1,2,1,31	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified	TOP	16777216 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.00015 Amp	18.4 mm		55 ns	5	YES
M29W640GH70ZF6E	STMicroelectronics	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified		67108864 bit	2.7 V		4/8		40	260	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W400BT120N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles	12 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	2.7	YES
M28W640FST70ZB6	STMicroelectronics	FLASH	INDUSTRIAL	47	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,32K	20 mA	4194304 words		NO	3/3.3	16	GRID ARRAY, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B47					Not Qualified	TOP	67108864 bit							NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F102B-100N6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,4K,16K,32K	50 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP40,.56,20		Flash Memories		.5 mm	85 Cel	3-STATE	1MX16	1M	-40 Cel	1,2,1,1	YES	TIN LEAD		DUAL	R-PDSO-G40	5.5 V	1.2 mm		10 mm	Not Qualified	BOTTOM	16777216 bit	4.5 V			e0			NOR TYPE	.0001 Amp	12.4 mm		100 ns	5	YES
M58BF008100D3T	STMicroelectronics	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS			262144 words	5			32	FLATPACK					.8 mm	125 Cel		256KX32	256K	-40 Cel					QUAD	R-PQFP-G80	5.5 V	3.4 mm		14 mm	Not Qualified		8388608 bit	4.5 V						NOR TYPE		20 mm		20 ns	5
M28W640ECT85N1S	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3.3			16	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4MX16	4M	0 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified	TOP	67108864 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		85 ns	3
M58MR016C120ZC6	STMicroelectronics	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	4K,32K	50 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,8X14,40/20		Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)		BOTTOM	R-PBGA-B48	2 V	1.2 mm		6.29 mm	Not Qualified	TOP	16777216 bit	1.7 V		4	e1			NOR TYPE	.000005 Amp	10.53 mm	YES	20 ns	1.8	NO
M29W004T-150N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	3-STATE	512KX8	512K	-20 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL	R-PDSO-G40	3.6 V	1.2 mm	100000 Write/Erase Cycles	10 mm	Not Qualified	TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		150 ns	2.7	YES
M29W800DXB55M6E	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44	3.6 V	2.8 mm		13.3 mm	Not Qualified	BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	28.2 mm	YES	55 ns	3	YES
M28F256-10B313	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE					2.54 mm	125 Cel	3-STATE	32KX8	32K	-40 Cel					DUAL	R-PDIP-T32	5.5 V			15.24 mm	Not Qualified		262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE				100 ns	12

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.