STMicroelectronics Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M28F256-15F113	STMicroelectronics	FLASH	COMMERCIAL	32	WDIP	RECTANGULAR	CERAMIC, GLASS-SEALED	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		50 mA	32768 words	5	NO	5	8	IN-LINE, WINDOW	DIP32,.6		Flash Memories		2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel		YES	TIN LEAD		DUAL		R-GDIP-T32	5.5 V	5.72 mm	1000 Write/Erase Cycles		15.24 mm	Not Qualified			262144 bit	4.5 V	1000 ERASE/PROGRAM CYCLES		e0			NOR TYPE	.0001 Amp	41.885 mm		150 ns	12	NO
M28W160CB90ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	46	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	1048576 words	3	NO	3,3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel			1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B46	3.6 V	1.2 mm			6.37 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	6.39 mm	YES	90 ns	3	NO
M28F410-80N3	STMicroelectronics	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	60 mA	262144 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel			256KX16	256K	-40 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G56						Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.0001 Amp			80 ns		NO
M28V841-150N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel	16	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			8388608 bit	3 V			e0			NOR TYPE	.000005 Amp	18.4 mm		150 ns	12	NO
M28W640ECT90N6T	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	NO
M28W800T100N1T	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	524288 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel			512KX16	512K	0 Cel	8,15	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		TOP	8388608 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	NO
M29W040-120N1R	STMicroelectronics	FLASH	COMMERCIAL	32	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	40 mA	524288 words	3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories		.5 mm	70 Cel	YES	3-STATE	512KX8	512K	0 Cel	8	YES	TIN LEAD		DUAL		R-PDSO-G32	3.6 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	2.7 V			e0			NOR TYPE	.000005 Amp	18.4 mm		120 ns	3	YES
M29W017D70ZA6	STMicroelectronics	FLASH	INDUSTRIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	2097152 words	3.3	YES	3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32		Flash Memories		.8 mm	85 Cel			2MX8	2M	-40 Cel	32	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B48	3.6 V	1.35 mm			8 mm	Not Qualified			16777216 bit	3 V			e0			NOR TYPE	.0001 Amp	9 mm	YES	70 ns	3	YES
M28F512-15B612	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE	PARALLEL			50 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel			64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32			100 Write/Erase Cycles			Not Qualified			524288 bit				e0			NOR TYPE	.0001 Amp			150 ns		NO
M29F100B-70M3TR	STMicroelectronics	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	131072 words	5	YES	5	8	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel			128KX8	128K	-40 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G44	5.5 V	2.62 mm			13.3 mm	Not Qualified		BOTTOM	1048576 bit	4.5 V	CONFG AS 64K X 16; BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	28.2 mm		70 ns	5	YES
M29F040B45K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	64K	20 mA	524288 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel			512KX8	512K	0 Cel	8	YES			QUAD		R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			4194304 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13.97 mm		45 ns	5	YES
M28F210-90N6	STMicroelectronics	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	35 mA	131072 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel			128KX16	128K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G48			100000 Write/Erase Cycles			Not Qualified		TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			90 ns		NO
M29W400ZA-90M6	STMicroelectronics	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel			256KX16	256K	-40 Cel	1,2,1,7	YES	Tin/Lead (Sn/Pb)	YES	BOTTOM		R-PBGA-B48			100000 Write/Erase Cycles			Not Qualified		TOP	4194304 bit				e0			NOR TYPE	.00005 Amp			90 ns		YES
M29W400T-100N1R	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.00005 Amp	18.4 mm		100 ns	2.7	YES
M58WR032EB80ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	30 mA	2097152 words	1.8	NO	1.8/2,1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM		R-PBGA-B56	2.2 V	1 mm			7.7 mm	Not Qualified		BOTTOM	33554432 bit	1.65 V		4	e0			NOR TYPE	.000005 Amp	9 mm	YES	80 ns	1.8	NO
M29DW323DB70N1F	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel			2MX16	2M	0 Cel	8,63	YES	TIN/TIN BISMUTH	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3/e6	30	260	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M28F101-120P6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel		3-STATE	128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V			e0			NOR TYPE	.00005 Amp	41.91 mm		120 ns	12	NO
M29F040-150N5R	STMicroelectronics	FLASH	OTHER	32	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	524288 words	5	YES	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP32,.8,20		Flash Memories	20	.5 mm	85 Cel	YES	3-STATE	512KX8	512K	-20 Cel	8	YES	TIN LEAD		DUAL		R-PDSO-G32	5.5 V	1.2 mm	100000 Write/Erase Cycles		8 mm	Not Qualified			4194304 bit	4.5 V	100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE		e0			NOR TYPE	.0001 Amp	18.4 mm		150 ns	5	YES
M29DW640F60N1E	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE		8			.5 mm	70 Cel			4MX16	4M	0 Cel			TIN/TIN BISMUTH		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM/TOP	67108864 bit	2.7 V	100,000 PROGRAM/ERASE CYCLES		e3/e6	40	260	NOR TYPE		18.4 mm		60 ns	3
M28F220-60XM6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE		16			1.27 mm	85 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G44	5.25 V	2.62 mm			13.3 mm	Not Qualified		BOTTOM	2097152 bit	4.75 V	BOTTOM BOOT BLOCK					NOR TYPE		28.2 mm		60 ns	12
M45PE20-VMP6G	STMicroelectronics	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS	NO LEAD	SERIAL	SYNCHRONOUS		15 mA	262144 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel			256KX8	256K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	SPI		2097152 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M28F211-70XN6	STMicroelectronics	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL		16K,8K,96K,128K	30 mA	262144 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel			256KX8	256K	-40 Cel	1,2,1,1	YES	Tin/Lead (Sn/Pb)		DUAL		R-PDSO-G40			100000 Write/Erase Cycles			Not Qualified		TOP	2097152 bit				e0			NOR TYPE	.000008 Amp			70 ns		NO
M28V161-150N6TR	STMicroelectronics	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel			2MX8	2M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			16777216 bit	3 V	100000 PROGRAM/ERASE CYCLES; SECTOR ERASE					NOR TYPE		18.4 mm		150 ns	12
M58BW016FB80ZA3FT	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B80	3.6 V	1.6 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	12 mm	YES	80 ns	3	NO
M29R008B-200N1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		3-STATE	1MX8	1M	0 Cel					DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			8388608 bit	1.8 V						NOR TYPE		18.4 mm		200 ns	3
M29W400B-120M1TR	STMicroelectronics	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel		3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL		R-PDSO-G44	3.6 V	2.62 mm	100000 Write/Erase Cycles		13.3 mm	Not Qualified		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00005 Amp	28.2 mm		120 ns	2.7	YES
M58BW016DB7ZA3FF	STMicroelectronics	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	2K,16K	30 mA	524288 words	3	NO	2.5/3.3,3/3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel			512KX32	512K	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B80	3.6 V	1.6 mm			10 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000005 Amp	12 mm	YES	70 ns	3	NO
M58WR064FT60ZB6	STMicroelectronics	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel			4MX16	4M	-40 Cel	8,127	YES	TIN LEAD		BOTTOM		R-PBGA-B56	2 V	1 mm			7.7 mm	Not Qualified		TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4	e0			NOR TYPE	.000005 Amp	9 mm	YES	60 ns	1.8	NO
M58BW032BT60ZA6	STMicroelectronics	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL		4K,2K,16K		1048576 words	3.3	NO	3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel			1MX32	1M	-40 Cel	4,8,62	YES			BOTTOM		R-PBGA-B80						Not Qualified		TOP	33554432 bit			4				NOR TYPE	.0001 Amp		YES	60 ns		NO
M28F256-12XC3TR	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			32768 words	5			8	CHIP CARRIER					1.27 mm	125 Cel		3-STATE	32KX8	32K	-40 Cel					QUAD		R-PQCC-J32	5.25 V	3.56 mm			11.455 mm	Not Qualified			262144 bit	4.75 V						NOR TYPE		13.995 mm		120 ns	12
M30LW128D110ZA6	STMicroelectronics	FLASH MODULE	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	128K	30 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel			8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00008 Amp	13 mm	YES	110 ns	3.3	NO
M29DW324DB70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	8K,64K	30 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)	YES	BOTTOM		R-PBGA-B63	3.6 V	1.2 mm			7 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29F080D55N1	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			1MX8	1M	0 Cel			TIN		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified			8388608 bit	4.5 V			e3			NOR TYPE		18.4 mm		55 ns	5
M28F101-15P6	STMicroelectronics	FLASH	INDUSTRIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	131072 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	85 Cel			128KX8	128K	-40 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32	5.5 V	5.08 mm			15.24 mm	Not Qualified			1048576 bit	4.5 V	BULK ERASE		e0			NOR TYPE	.0001 Amp	41.91 mm		150 ns	12	NO
M28W320ECT85ZB6T	STMicroelectronics	FLASH	INDUSTRIAL	47	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA47,6X8,30		Flash Memories		.75 mm	85 Cel			2MX16	2M	-40 Cel	8,63	YES	Tin/Lead (Sn63Pb37)		BOTTOM		R-PBGA-B47	3.6 V	1.2 mm			6.37 mm	Not Qualified		TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	6.39 mm	YES	85 ns	3	NO
M30W0R7000T1ZAQF	STMicroelectronics	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	45 mA	8388608 words	1.8	NO	1.8,1.8/2	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel			8MX16	8M	-40 Cel	8, 255	YES			BOTTOM		R-PBGA-B88	2 V	1.2 mm			8 mm	Not Qualified		TOP	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION POSSIBLE	4		NOT SPECIFIED	260	NOR TYPE	.000005 Amp	10 mm	YES	60 ns	1.8	NO
M28F256-12XB113	STMicroelectronics	FLASH	COMMERCIAL	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS			32768 words	5			8	IN-LINE					2.54 mm	70 Cel		3-STATE	32KX8	32K	0 Cel					DUAL		R-PDIP-T32	5.25 V				15.24 mm	Not Qualified			262144 bit	4.75 V	1000 ERASE/PROGRAM CYCLES					NOR TYPE				120 ns	12
M28F512-90XB3	STMicroelectronics	FLASH	AUTOMOTIVE	32	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	PARALLEL	ASYNCHRONOUS		30 mA	65536 words	5	NO	5	8	IN-LINE	DIP32,.6		Flash Memories		2.54 mm	125 Cel		3-STATE	64KX8	64K	-40 Cel		YES	TIN LEAD		DUAL		R-PDIP-T32	5.25 V	5.08 mm	10000 Write/Erase Cycles		15.24 mm	Not Qualified			524288 bit	4.75 V			e0			NOR TYPE	.0001 Amp	41.91 mm		90 ns	12	NO
M29F002T-120K1	STMicroelectronics	FLASH	COMMERCIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	70 Cel		3-STATE	256KX8	256K	0 Cel	1,2,1,3	YES	TIN LEAD		QUAD		R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles		11.455 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	13.995 mm		120 ns	5	YES
M29R008T-120N5	STMicroelectronics	FLASH	OTHER	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words				8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		3-STATE	1MX8	1M	-20 Cel					DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			8388608 bit	2.7 V						NOR TYPE		18.4 mm		120 ns	3
M29F100T-120N1R	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	60 mA	65536 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES	3-STATE	64KX16	64K	0 Cel	1,2,1,1	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	1048576 bit	4.5 V	CONFG AS 64K X 16; TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	18.4 mm		120 ns	5	YES
M28F411-80XN1TR	STMicroelectronics	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel			512KX8	512K	0 Cel					DUAL		R-PDSO-G40	5.25 V	1.2 mm			10 mm	Not Qualified		TOP	4194304 bit	4.75 V	100000 PROGRAM/ERASE CYCLES; TOP BOOT BLOCK					NOR TYPE		18.4 mm		80 ns	12
M28F210-100N3TR	STMicroelectronics	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	5			8	SMALL OUTLINE, THIN PROFILE					.5 mm	125 Cel			256KX8	256K	-40 Cel					DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified		TOP	2097152 bit	4.5 V	100000 PROGRAM/ERASE CYCLES; USER CONFIGURABLE AS 128K X 16; BLOCK ERASE; TOP BOOT BLOCK					NOR TYPE		18.4 mm		100 ns	12
M29W320DT70ZA6T	STMicroelectronics	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA63,8X12,32	8	Flash Memories		.8 mm	85 Cel			2MX16	2M	-40 Cel	1,2,1,63	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B63	3.6 V	1.2 mm			7 mm	Not Qualified		TOP	33554432 bit	3 V	TOP BOOT BLOCK		e0			NOR TYPE	.0001 Amp	11 mm	YES	70 ns	3	YES
M29F102B-100K6TR	STMicroelectronics	FLASH	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS			1048576 words	5			16	CHIP CARRIER					1.27 mm	85 Cel		3-STATE	1MX16	1M	-40 Cel					QUAD		S-PQCC-J44	5.5 V	4.57 mm			16.5862 mm	Not Qualified		BOTTOM	16777216 bit	4.5 V						NOR TYPE		16.5862 mm		100 ns	5
M29F010B90K3F	STMicroelectronics	FLASH	AUTOMOTIVE	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	ASYNCHRONOUS	16K	20 mA	131072 words	5	YES	5	8	CHIP CARRIER	LDCC32,.5X.6		Flash Memories		1.27 mm	125 Cel			128KX8	128K	-40 Cel	8	YES	MATTE TIN		QUAD		R-PQCC-J32	5.5 V	3.56 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified			1048576 bit	4.5 V			e3			NOR TYPE	.0001 Amp	13.97 mm		70 ns	5	YES
M29W400T-120ZA1	STMicroelectronics	FLASH	COMMERCIAL	48	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	70 Cel			512KX8	512K	0 Cel	1,2,1,7	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM		R-PBGA-B48	3.6 V	1.35 mm	100000 Write/Erase Cycles		6 mm	Not Qualified		TOP	4194304 bit	2.7 V	CONFIGURABLE AS 256K X 16		e1			NOR TYPE	.00005 Amp	9 mm		120 ns	2.7	YES
M29W400T-120N1RTR	STMicroelectronics	FLASH	COMMERCIAL	48	TSOP1-R	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel	YES	3-STATE	256KX16	256K	0 Cel	1,2,1,7	YES	TIN LEAD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified		TOP	4194304 bit	2.7 V			e0			NOR TYPE	.00005 Amp	18.4 mm		120 ns	2.7	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.