Infineon Technologies Flash Memory

Part	Manufacturer	Memory IC Type	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29GL128S10TFV023	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES
S29GL01GS11TFIV23	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL01GS11TFA013	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128S11TFVV10	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128S90GHI023	Infineon Technologies	FLASH	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B56	3	3.6 V	1 mm	100000 Write/Erase Cycles	7 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL128S10DHV020	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL01GS11FHB010	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL01GS11DHIV13	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL01GS10DHA010	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL512S12DHVV10	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL01GS12TFVV13	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	18.4 mm	YES	120 ns	3	YES
S29GL128S90FAI020	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e0			NAND TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
S29GL128S11FHVV20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL512S10TFA013	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL01GS12DHVV10	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	120 ns	3	YES
S29GL512S11FHAV20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	110 ns	3	YES
S29GL01GS12FHBV10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29GL128S11TFBV20	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL01GS11DHIV23	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL01GS11DHV010	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL01GS11TFAV20	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL512S12FHBV20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29GL01GS11DHB013	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL128S90TFA010	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	90 ns	3	YES
S29GL256S11DHVV13	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	110 ns	3	YES
S29GL512S10TFI023	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL128S11TFBV13	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128S10FHIV23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL128S10FAIV20	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL128S10FHB023	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	100 ns	3	YES
S29GL01GS11TFAV23	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES		YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128S11TFVV20	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL512S10FHI023	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	100 ns	3	YES
S29GL01GS11TFB020	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL128S11FHBV10	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL128S10DHV010	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL512S12FHBV23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	13 mm	YES	120 ns	3	YES
S29GL256S90FHI010	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
S29GL128S10TFV013	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0002 Amp	18.4 mm	YES	100 ns	3	YES
S29GL256S10DHB010	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL256S11TFVV10	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0002 Amp	18.4 mm	YES	110 ns	3	YES
S29GL256S90DHA013	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES		YES	BOTTOM	S-PBGA-B64		3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	90 ns	3	YES
S29GL256S10DHV023	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	9 mm	YES	100 ns	3	YES
S29GL128S90FAI013	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN LEAD	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e0			NAND TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
S29GL512S11GHI010	Infineon Technologies	FLASH	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	67108864 words	3	YES	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,8X8,32	1	2	.8 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel	512	YES		YES	BOTTOM	R-PBGA-B56		3.6 V	1 mm	100000 Write/Erase Cycles	7 mm	BOTTOM/TOP	536870912 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32				NAND TYPE	.0001 Amp	9 mm	YES	110 ns	3	YES
S29GL128S11FHVV23	Infineon Technologies	FLASH	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm	BOTTOM/TOP	134217728 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0002 Amp	13 mm	YES	110 ns	3	YES
S29GL256S10DHAV23	Infineon Technologies	FLASH	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100; TS 16949	BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	33554432 words	3	YES	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1	2	1 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles	9 mm		268435456 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29GL01GS10TFI023	Infineon Technologies	FLASH	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words	3	YES	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1	2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	14 mm		1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3			NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES

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