Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S25FL132K0XMFI011	Infineon Technologies	FLASH		8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	4194304 words		3			8	SMALL OUTLINE	SOP8,.3			20	1.27 mm	85 Cel	3-STATE	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.28 mm			SPI		33554432 bit	2.7 V						NOR TYPE	.000008 Amp	5.28 mm			3
S25FL132K0XNFB010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS			8388608 words		3			4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE		2			1.27 mm	105 Cel		8MX4	8M	-40 Cel					DUAL		R-PDSO-N8		3.6 V	.8 mm		108 MHz	5 mm					33554432 bit	2.7 V	IT IS ALSO CONFIGURED AS 32M X 1			NOT SPECIFIED	NOT SPECIFIED			6 mm			3
S25FL132K0XNFI010	Infineon Technologies	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		25 mA	8388608 words		3		3/3.3	4	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25	2	Flash Memories	20	1.27 mm	85 Cel		8MX4	8M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.8 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CONFIGURABLE AS 32M X 1		e3			NOR TYPE	.000005 Amp	6 mm			3
S25FL164K0XBHI023	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		25 mA	16777216 words		3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		16MX4	16M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1		e1			NOR TYPE	.000005 Amp	8 mm			3
S25FL164K0XMFI003	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		25 mA	16777216 words		3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		67108864 bit	2.7 V	ALSO CONFIGURABLE AS 64M X 1		e3			NOR TYPE	.000005 Amp	10.3 mm			3
S25FL256LAGBHM023	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		50 mA	33554432 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V						NOR TYPE	.00006 Amp	8 mm			3
S25FL256LAGMFA000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words		3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL256LAGMFM003	Infineon Technologies	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words		3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	125 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL256LDPMFI000	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		50 mA	33554432 words		3			8	SMALL OUTLINE	SOP16,.4			20	1.27 mm	85 Cel	3-STATE	32MX8	32M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	66 MHz	7.5 mm			SPI		268435456 bit	2.7 V			e3			NOR TYPE	.00006 Amp	10.3 mm			3
S25FL256SAGBHEA00	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	33554432 words	COMMON	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4		20	1 mm	125 Cel	3-STATE	32MX8	32M	-55 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100 Write/Erase Cycles	133 MHz	6 mm			SPI		268435456 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
S25FL256SAGBHIA13	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words		3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
S25FL256SAGBHMC10	Infineon Technologies	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words		3			4	GRID ARRAY, THIN PROFILE		2			1 mm	125 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3	3.6 V	1.2 mm		133 MHz	6 mm		500 ms			268435456 bit	2.7 V	ALSO CONFIGURABLE AS 256M X 1		e1			NOR TYPE		8 mm			3
S25FL256SAGMFV011	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	67108864 words		3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	105 Cel		64MX4	64M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	IT ALSO CONFIGURED AS 256M X 1		e3			NOR TYPE	.0003 Amp	10.3 mm			3
S25FL256SDPBHIC03	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words		3		3/3.3	4	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	2	Flash Memories	20	1 mm	85 Cel		64MX4	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified	500 ms	SPI	BOTTOM	268435456 bit	2.7 V	ALSO CONFIGURABLE AS 128M X 1		e1			NOR TYPE	.0001 Amp	8 mm			3
S25FL512SAGBAEC10	Infineon Technologies	FLASH	MILITARY	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	67108864 words		3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel	3-STATE	64MX8	64M	-55 Cel			TIN LEAD		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V			e0			NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGBHVB10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words		3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,4X6,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V						NOR TYPE	.0003 Amp	8 mm			3
S25FL512SAGMFVG13	Infineon Technologies	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	64094208 words		3		3/3.3	8	SMALL OUTLINE	SOP16,.4	4	Flash Memories	20	1.27 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3	3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm	Not Qualified		SPI		512753664 bit	2.7 V			e3	30	260	NOR TYPE	.0003 Amp	10.3 mm			3
S25FL512SDPBHIC10	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words		3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	85 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
S25FL512SDPBHV210	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		100 mA	64094208 words		3		3/3.3	8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40	4	Flash Memories	20	1 mm	105 Cel	3-STATE	64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3	3.6 V	1.2 mm	100000 Write/Erase Cycles	66 MHz	6 mm	Not Qualified		SPI		512753664 bit	2.7 V			e1			NOR TYPE	.0003 Amp	8 mm			3
S25FS064SAGNFN030	Infineon Technologies	FLASH	AUTOMOTIVE	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words		1.8			4	GRID ARRAY		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm					67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1							6 mm			1.8
S25FS064SAGNFV030	Infineon Technologies	FLASH	INDUSTRIAL	8	LGA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			16777216 words		1.8			4	GRID ARRAY		2			1.27 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-XBGA-N8	3	2 V	.8 mm		133 MHz	5 mm					67108864 bit	1.7 V	IT ALSO HAS MEMORY WIDTH X 1							6 mm			1.8
S25FS064SDSBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			16777216 words		1.8			4	GRID ARRAY, THIN PROFILE		2			1 mm	105 Cel		16MX4	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	2 V	1.2 mm		80 MHz	6 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1							8 mm			1.8
S25FS064SDSMFN010	Infineon Technologies	FLASH	AUTOMOTIVE	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words		1.8			4	SMALL OUTLINE		2			1.27 mm	125 Cel		16MX4	16M	-40 Cel			MATTE TIN		DUAL		S-PDSO-G8	3	2 V	2.159 mm		80 MHz	5.283 mm					67108864 bit	1.7 V	IT ALSO HAVE MEMORY WIDTH X 1		e3					5.283 mm			1.8
S25FS128SAGMFI101	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words		1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS128SAGMFV100	Infineon Technologies	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		100 mA	16777216 words		1.8			8	SMALL OUTLINE	SOP8,.3			2	1.27 mm	105 Cel	3-STATE	16MX8	16M	-40 Cel			MATTE TIN		DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3	2 V	2.16 mm	100000 Write/Erase Cycles	133 MHz	5.28 mm			SPI		134217728 bit	1.7 V			e3			NOR TYPE	.0003 Amp	5.28 mm			1.8
S25FS128SDSBHM200	Infineon Technologies	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS		100 mA	16777216 words		1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			2	1 mm	125 Cel	3-STATE	16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PBGA-B24	3	2 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		134217728 bit	1.7 V						NOR TYPE	.0003 Amp	8 mm			1.8
S26KL128SDABHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			16777216 words		3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm					134217728 bit	2.7 V								8 mm		96 ns	3
S26KL512SDABHB020	Infineon Technologies	FLASH	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words		3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm			6 mm					536870912 bit	2.7 V			e1					8 mm		96 ns	3
S26KS256SDPBHV020	Infineon Technologies	FLASH	INDUSTRIAL	24	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			33554432 words		1.8			8	GRID ARRAY						105 Cel		32MX8	32M	-40 Cel					BOTTOM		R-PBGA-B24	3	1.95 V									268435456 bit	1.7 V										96 ns	1.8
S29AL016J55BFIR10	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words		3.3	YES	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			TOP	16777216 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	55 ns	3	YES
S29AL016J70FFI010	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words		3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified			TOP	16777216 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE	.000005 Amp	9 mm	YES	70 ns	3	YES
S29AS016J70BFI032	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words		1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3	1.95 V	1 mm			6.15 mm	Not Qualified			TOP	16777216 bit	1.65 V	TOP BOOT BLOCK					NOR TYPE		8.15 mm		70 ns	1.8
S29GL01GS10TFI020	Infineon Technologies	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	100 mA	134217728 words		3	YES		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	1		2	.5 mm	85 Cel	3-STATE	128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm					1073741824 bit	2.7 V	20 YEARS DATA RETENTION; 10000 ERASE/PROGRAM CYCLES	32	e3	30	260	NAND TYPE	.0001 Amp	18.4 mm	YES	100 ns	3	YES
S29GL032M11TAIR0	Infineon Technologies	FLASH	INDUSTRIAL	40	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words		3.3	YES	3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel		4MX8	4M	-40 Cel	64	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	3	3.6 V	1.2 mm			10 mm	Not Qualified				33554432 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	8	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29GL032N90BFA043	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			2097152 words		3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm					33554432 bit	2.7 V								8.15 mm		90 ns	3
S29GL032N90BFI043	Infineon Technologies	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words		3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3	3.6 V	1 mm			6.15 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	8.15 mm	YES	90 ns	3	YES
S29GL032N90FFIS30	Infineon Technologies	FLASH		64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K		2097152 words		3	YES		16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8			1 mm	85 Cel		2MX16	2M	-40 Cel		NO		YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm					33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3	NO
S29GL032N90TFI043	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	50 mA	2097152 words		3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL064N11FFIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words		3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM/TOP	67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL064N90TFA023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm				BOTTOM/TOP	67108864 bit	2.7 V						NOR TYPE		18.4 mm		90 ns	3
S29GL064S70FHI030	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	80 mA	4194304 words		3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel	3-STATE	4MX16	4M	-40 Cel	8,127			YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm				TOP	67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	13 mm		70 ns	3	YES
S29GL064S70TFA010	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words		3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		4MX16	4M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					67108864 bit	2.7 V			e3					18.4 mm		70 ns	3
S29GL064S80DHV020	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	4194304 words		3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	105 Cel	3-STATE	4MX16	4M	-40 Cel	128			YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm					67108864 bit	2.7 V		8/16				NOR TYPE	.0001 Amp	9 mm		80 ns	3	YES
S29GL128N90FFIR10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words		3.3	YES	3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	3 V		8/16	e1	40	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29GL128N90TFIR20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	90 mA	8388608 words		3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	3 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	90 ns	3	YES
S29GL128P10TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	HTSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	110 mA	134217728 words		3	YES	3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		128MX1	128M	-40 Cel	128	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	100 ns	3	YES
S29GL128S11DHIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	80 mA	16777216 words		3	YES	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm			9 mm	Not Qualified				134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.0001 Amp	9 mm	YES	110 ns	2.7	YES
S29GL256N11TFI020	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	90 mA	16777216 words		3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				268435456 bit	2.7 V		8/16	e3	40	260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.