Infineon Technologies Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
S29CD032J1JFFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S28HS512TFPBHM0303	Infineon Technologies	FLASH																																																												1.8
S29CL032J0JQFI103	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S29CD032J0RQFI112	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e3			NOR TYPE		20 mm		48 ns	2.7
S29CL016J1JFFI123	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		512KX32	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1			NOR TYPE		13 mm		54 ns	3.3
S29GL256S10TFI023	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	33554432 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	256	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				268435456 bit	2.7 V		16				NOR TYPE	.0001 Amp	18.4 mm	YES	100 ns	2.7	YES
S29GL512T13FHIV20	Infineon Technologies	FLASH
S29CL016J0MFAM000	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL032J0PFAI130	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		13 mm		54 ns	3.3
S29GL512T10TFB023	Infineon Technologies	FLASH
S29CD032J0JBFI030	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	1048576 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		1MX32	1M	-40 Cel	16,62	YES		YES	BOTTOM		R-PBGA-B80		2.75 V	1.4 mm			9 mm	Not Qualified			BOTTOM	33554432 bit	2.5 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29CL032J1JFAM00	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	GRID ARRAY					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.4 mm		40 MHz	11 mm	Not Qualified	.000065 ms		TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							13 mm		54 ns	3.3
S29GL01GS10TFA013	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3			8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel		128MX8	128M	-40 Cel					DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					1073741824 bit	2.7 V								18.4 mm		100 ns	3
S29CL016J1JBFI003	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			TOP	16777216 bit	3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29GL128S100DHIV13	Infineon Technologies	FLASH		64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	100 mA	16777216 words	3	YES		8	GRID ARRAY, LOW PROFILE	BGA64,8X8,40			20	1 mm	85 Cel	3-STATE	16MX8	16M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		S-PBGA-B64	3	3.6 V	1.4 mm	100000 Write/Erase Cycles		9 mm		.00006 ms			134217728 bit	2.7 V		32	e1	30	260	NAND TYPE	.0001 Amp	9 mm	YES	100 ns	3	YES
S29CD016J0MFFM103	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29WS01GS0SWHW003	Infineon Technologies
S29GL032N11TAIV10	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				33554432 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29CL016J1MFFM130	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3		GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	3 V	TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CD032J1MQAI022	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	2.6			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	2.75 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	2.5 V			e0			NOR TYPE		20 mm		54 ns	2.7
S29CD016J0MFFM122	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29GL512T12FAIV10	Infineon Technologies	FLASH
S29GL01GT12DHA040	Infineon Technologies	FLASH
S29GL064N11TAIV23	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	4194304 words	3	YES	1.8/3.3,3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				67108864 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29CD016J0MFFI033	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B80	3	2.75 V	1.4 mm			11 mm	Not Qualified			BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e1	40	260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	2.7	YES
S29XS032RABBHW301	Infineon Technologies	FLASH
S26HS256TGABHV020	Infineon Technologies	FLASH		24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			33554432 words	1.8			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	105 Cel	OPEN-DRAIN	32MX8	32M	-40 Cel					BOTTOM	HARDWARE	R-PBGA-B24		2 V	1 mm	640000 Write/Erase Cycles	200 MHz	6 mm			SPI		268435456 bit	1.7 V						NOR TYPE		8 mm			1.8
S29XS256R0SBHW13	Infineon Technologies	FLASH	OTHER	44	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	1.8			16	GRID ARRAY					.5 mm	85 Cel		16MX16	16M	-25 Cel					BOTTOM		R-PBGA-B44		1.95 V	1 mm			6.2 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE							7.7 mm		80 ns	1.8
S29CL032J0JFAM013	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29GL512T10FAI033	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM/TOP	536870912 bit	2.7 V						NOR TYPE		13 mm		100 ns	2.7
S29CD016J0PQAM13	Infineon Technologies	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	16,30	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm		66 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S26HL01GTGABHA023	Infineon Technologies	FLASH		24	VBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			134217728 words	3			8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40			25	1 mm	85 Cel	OPEN-DRAIN	128MX8	128M	-40 Cel					BOTTOM	HARDWARE	S-PBGA-B24		3.6 V	1 mm	2560000 Write/Erase Cycles	200 MHz	8 mm			SPI		1073741824 bit	2.7 V						NOR TYPE		8 mm			3
S29GL064N90FFIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	60 mA	4194304 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				67108864 bit	2.7 V		8/16	e1	30	260	NOR TYPE	.000005 Amp	13 mm	YES	90 ns	3	YES
S29CD032J0RQAI01	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	2.6	YES	1.8/2.6,2.6	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	85 Cel		512KX32	512K	-40 Cel	16,62	YES		YES	QUAD		R-PQFP-G80		2.75 V	3.35 mm		75 MHz	14 mm	Not Qualified	.000065 ms		BOTTOM	16777216 bit	2.5 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE	.00006 Amp	20 mm	YES	54 ns	2.7	YES
S29GL032N11FAIV20	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	3	YES	1.8/3.3,3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				33554432 bit	2.7 V		8/16	e0		260	NOR TYPE	.000005 Amp	13 mm	YES	110 ns	3	YES
S29GL01GT12DHN030	Infineon Technologies	FLASH	AUTOMOTIVE	64	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		64MX16	64M	-40 Cel					BOTTOM		S-PBGA-B64		3.6 V	1.4 mm			9 mm				BOTTOM/TOP	1073741824 bit	2.7 V						NOR TYPE		9 mm		120 ns	2.7
S29GL512T12FHA013	Infineon Technologies	FLASH
S29CL032J0JFAM023	Infineon Technologies	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	1048576 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	125 Cel		1MX32	1M	-40 Cel	16,62	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S28HS256TGABHA0103	Infineon Technologies	FLASH																																																												1.8
S29GL064M11TAIR7	Infineon Technologies	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	32K	60 mA	4194304 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN LEAD		DUAL		R-PDSO-G48	3	3.6 V	1.2 mm			12 mm	Not Qualified				67108864 bit	3 V	IT ALSO OPERATES AT 2.7 TO 3.6 V SUPPLY FULL VOLTAGE RANGE	4	e0		260	NOR TYPE	.000005 Amp	18.4 mm	YES	110 ns	3	YES
S29CL016J1JFAI000	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80	3	3.6 V	1.4 mm			11 mm	Not Qualified			TOP	16777216 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0		260	NOR TYPE	.00006 Amp	13 mm	YES	54 ns	3.3	YES
S29CL016J1JBAI020	Infineon Technologies	FLASH	INDUSTRIAL	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	2K,16K	90 mA	524288 words	3.3	YES	1.8/3.3,3.3	32	GRID ARRAY, LOW PROFILE	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		512KX32	512K	-40 Cel	16,30	YES	TIN LEAD	YES	BOTTOM		R-PBGA-B80		3.6 V	1.4 mm			9 mm	Not Qualified			TOP	16777216 bit	3 V			e0			NOR TYPE	.00006 Amp	11 mm	YES	54 ns	2.7	YES
S29GL512T13DHBV40	Infineon Technologies	FLASH
S29CL032J0PQAI120	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3.3			32	FLATPACK					.8 mm	85 Cel		1MX32	1M	-40 Cel			TIN LEAD		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			TOP	33554432 bit	3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT BLOCK		e0			NOR TYPE		20 mm		54 ns	3.3
S29GL128P13FAIV10	Infineon Technologies	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN LEAD		BOTTOM		R-PBGA-B64	3	3.6 V	1.4 mm			11 mm	Not Qualified				134217728 bit	2.7 V			e0			NOR TYPE		13 mm		110 ns	3
S29CL016J0JQFI012	Infineon Technologies	FLASH	INDUSTRIAL	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			32	FLATPACK					.8 mm	85 Cel		512KX32	512K	-40 Cel			MATTE TIN		QUAD		R-PQFP-G80	3	3.6 V	3.35 mm			14 mm	Not Qualified			BOTTOM	16777216 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		20 mm		54 ns	3.3
S29GL01GS12TFIV20	Infineon Technologies	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	80 mA	134217728 words	3	YES	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	MATTE TIN	YES	DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm	Not Qualified				1073741824 bit	2.7 V		16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	120 ns	2.7	YES
S28HS01GTGABHI0100	Infineon Technologies	FLASH																																																												1.8

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.