EEPROM | Vyrian

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Command User Interface	Terminal Finish	I2C Control Byte	Terminal Position	No. of Ports	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time	Programming Voltage (V)	Data Polling
25AA02E48T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	6	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP6,.11,37	EEPROMs	200	.95 mm	85 Cel		3-STATE	256X8	256	-40 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G6	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	10 MHz	1.55 mm	Not Qualified	5 ms	SPI	2048 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @5MHZ AND 1.8V TO 2.5V @3MHZ		e3	40	260		.000001 Amp	2.9 mm		5
AT25128B-SSHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	16384 words	5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	100	1.27 mm	85 Cel		3-STATE	16KX8	16K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	131072 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ		e4	40	260		.000005 Amp	4.925 mm		5
AT24C256C-SSHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES 1.7V TO 5.5V @0.4MHZ		e4		260		.000006 Amp	4.9 mm		3
24LC256-I/P	Microchip Technology	EEPROM	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	AEC-Q100	THROUGH-HOLE	SERIAL	SYNCHRONOUS	3 mA	32768 words	4.5		3/5	8	IN-LINE	DIP8,.3	EEPROMs	200	2.54 mm	85 Cel	NO	OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDIP-T8		5.5 V	5.334 mm	1000000 Write/Erase Cycles	.4 MHz	7.62 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V			e3				.000005 Amp	9.271 mm		4.5
AT24CM01-SSHD-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5		2.7/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	40	1.27 mm	85 Cel			128KX8	128K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e3		260		.000001 Amp	4.925 mm		5
DS2431X+S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel			1KX1	1K	-40 Cel		MATTE TIN		BOTTOM			S-PBGA-B6		5.25 V	.77 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3					1.68 mm
DS2431X-S	Maxim Integrated	EEPROM	INDUSTRIAL	6	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		1024 words	3.3		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	10	.5 mm	85 Cel			1KX1	1K	-40 Cel		TIN LEAD		BOTTOM			R-PBGA-B6		5.25 V	.67 mm	50000 Write/Erase Cycles		1.75 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e0					1.98 mm
DS2431X-S+	Analog Devices	EEPROM	INDUSTRIAL	6	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA6,2X3,40/20	EEPROMs	40	.5 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	TIN SILVER COPPER NICKEL		BOTTOM		HARDWARE	S-PBGA-B6	1	5.25 V	.98 mm	50000 Write/Erase Cycles		1.68 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e2	30	260			1.68 mm			NO
24LC16BT-I/OTG	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL		HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V	1 MILLION ERASE/WRITE CYCLES		e3		260		.000001 Amp	2.95 mm
CAT25256VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	4 mA	32768 words	5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			32KX8	32K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	262144 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260		.000001 Amp	4.9 mm
24LC16BT-E/OT	Microchip Technology	EEPROM	AUTOMOTIVE	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		3/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	125 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3		260		.000005 Amp	2.95 mm		5
AT25640B-SSHL-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	10 mA	8192 words	5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	100	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	4.5 V	2.5V TO 5.5V @ 10MHz AND 1.8V TO 5.5V @ 5MHz	32	e4	40	260		.00001 Amp	4.925 mm		5
CAT24C512WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			64KX8	64K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260		.000002 Amp	4.9 mm
CAT24C64WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	2 mA	8192 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	1.7 V	100 YEAR DATA RETENTION		e4	40	260		.000003 Amp	4.9 mm
AT24C512C-SSHD-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	2.5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	40	1.27 mm	85 Cel		OPEN-DRAIN	64KX8	64K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	524288 bit	1.7 V			e3		260		.000006 Amp	4.925 mm		2.5
24LC128-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	16384 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel		OPEN-DRAIN	16KX8	16K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	131072 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		4.5
24AA64T-I/MC	Microchip Technology	EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		2/5	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	200	.5 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		Matte Tin (Sn)	1010DDDR	DUAL	1	HARDWARE	R-PDSO-N8	1	5.5 V	1 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V			e3	40	260		.000001 Amp	3 mm		4.5
XCF04SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4194304 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			4MX1	4M	-40 Cel		MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			4194304 bit	3 V			e3					6.5024 mm
AT24CM02-SSHD-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	3			8	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel		OPEN-DRAIN	256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		10 ms	I2C	2097152 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz AND 1.7V TO 5.5V @ 0.1MHz		e4	40	260		.000003 Amp	4.9 mm		3
XCF32PFSG48C	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS	40 mA	33554432 words	1.8		1.5/3.3,1.8	1	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	Flash Memories	20	.8 mm	85 Cel		3-STATE	32MX1	32M	-40 Cel		Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)		BOTTOM		HARDWARE	R-PBGA-B48	3	2 V	1.2 mm	20000 Write/Erase Cycles	50 MHz	8 mm	Not Qualified			33554432 bit	1.65 V	IT CAN ALSO OPERATES AT 2.5, 3.3 VOLT NOMINAL		e2	30	260	NOR TYPE		9 mm		1.8
25AA02E48T-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	256 words	5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel		3-STATE	256X8	256	-40 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm	Not Qualified	5 ms	SPI	2048 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @5MHZ AND 1.8V TO 2.5V @3MHZ		e3	30	260		.000001 Amp	4.9 mm		5
AT24C02C-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	256 words	2.5			8	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel		OPEN-DRAIN	256X8	256	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	2048 bit	1.7 V			e4				.000006 Amp	4.925 mm		2.5
CAT25512VI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	65536 words	5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	100	1.27 mm	85 Cel			64KX8	64K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	5 ms	SPI	524288 bit	1.8 V	100 YEAR DATA RETENTION		e4	40	260		.000001 Amp	4.9 mm
AT24CM01-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	131072 words	5		1.8/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	40	1.27 mm	85 Cel			128KX8	128K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	1048576 bit	2.5 V	1.7V TO 5.5V @ 0.4MHz		e4	40	260		.000001 Amp	4.925 mm		5
M95M02-DRMN6TP	STMicroelectronics	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	262144 words	2.5		2/5	8	SMALL OUTLINE	SOP8,.25	EEPROMs	200	1.27 mm	85 Cel			256KX8	256K	-40 Cel		NICKEL PALLADIUM GOLD		DUAL		HARDWARE/SOFTWARE	R-PDSO-G8	1	5.5 V	1.75 mm	4000000 Write/Erase Cycles	5 MHz	3.9 mm	Not Qualified	10 ms	SPI	2097152 bit	1.8 V			e4	30	260		.000003 Amp	4.9 mm
DS24B33G+U	Analog Devices	EEPROM CARD	INDUSTRIAL	2			PLASTIC/EPOXY	YES					SERIAL			512 words			3/5	8		SURF MNT 2,.25SQ	EEPROMs			85 Cel			512X8	512	-40 Cel		NICKEL PALLADIUM GOLD						1			50000 Write/Erase Cycles			Not Qualified			4096 bit				e4							2.7
DS2431Q+T&R	Analog Devices	EEPROM	INDUSTRIAL	6	HVSON	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC6,.11,37	EEPROMs	40	.95 mm	85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	Matte Tin (Sn) - annealed		DUAL		HARDWARE	S-PDSO-N6	1	5.25 V	.8 mm	50000 Write/Erase Cycles		3 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e3	30	260			3 mm			NO
25LC256-I/SNRVB	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel			32KX8	32K	-40 Cel				DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V							.000001 Amp	4.9 mm		4.5
AT24C256C-SSHL-B	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	100	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	3	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm	Not Qualified	5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES 1.7V TO 5.5V @0.4MHZ		e3				.000006 Amp	4.9 mm		3
24LC256-I/SNRVE	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	32768 words	3.6			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel		OPEN-DRAIN	32KX8	32K	-40 Cel			1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm		5 ms	I2C	262144 bit	2.5 V	ALSO OPERATES AT 1.7V TO 2.5V @ 0.1MHZ						.0000015 Amp	4.9 mm		3.6
DS2431G+T&R	Analog Devices	EEPROM	INDUSTRIAL	2	VBCC	SQUARE	UNSPECIFIED	YES	1	CMOS		BUTT	SERIAL	ASYNCHRONOUS		1024 words	3.3		3/5	1	CHIP CARRIER, VERY THIN PROFILE	SURF MNT 2,.25SQ	EEPROMs	40		85 Cel	NO	OPEN-DRAIN	1KX1	1K	-40 Cel	NO	NICKEL PALLADIUM GOLD		BOTTOM		HARDWARE	S-XBCC-B2		5.25 V	1 mm	50000 Write/Erase Cycles		6 mm	Not Qualified		1-WIRE	1024 bit	2.8 V	MEMORY ORGANIZED AS FOUR PAGES OF 256 BITS		e4					6 mm			NO
24LC64-I/ST	Microchip Technology	EEPROM	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	4.5		3/5	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25	EEPROMs	200	.65 mm	85 Cel		OPEN-DRAIN	8KX8	8K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.2 mm	1000000 Write/Erase Cycles	.4 MHz	3 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3				.000001 Amp	4.4 mm		4.5
AT28HC64B-12JU	Microchip Technology	EEPROM	INDUSTRIAL	32	QCCJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	5	YES	5	8	CHIP CARRIER	LCC32,.45X.55	EEPROMs	10	1.27 mm	85 Cel		3-STATE	8KX8	8K	-40 Cel	NO	MATTE TIN		QUAD	1		R-PQCC-J32	3	5.5 V	3.556 mm	100000 Write/Erase Cycles		11.43 mm	Not Qualified	10 ms		65536 bit	4.5 V		64	e3	40	245		.0001 Amp	13.97 mm	120 ns	5	YES
CAT24C32WI-GT3	Onsemi	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		4096 words	5		1.8/5	8	SMALL OUTLINE		EEPROMs		1.27 mm	85 Cel			4KX8	4K	-40 Cel		Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		1 MHz	3.9 mm	Not Qualified	5 ms	I2C	32768 bit	1.7 V	100 YEAR DATA RETENTION		e4	40	260			4.9 mm
24AA16T-I/OT	Microchip Technology	EEPROM	INDUSTRIAL	5	LSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	2.5		2/5	8	SMALL OUTLINE, LOW PROFILE, SHRINK PITCH	TSOP5/6,.11,37	EEPROMs	200	.95 mm	85 Cel			2KX8	2K	-40 Cel		MATTE TIN	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G5	1	5.5 V	1.45 mm	1000000 Write/Erase Cycles	.4 MHz	1.63 mm	Not Qualified	5 ms	I2C	16384 bit	1.7 V	1.7V TO 2.5V @ 0.1MHz		e3		260		.000001 Amp	2.95 mm		2.5
AT24C16C-SSHM-T	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	3			8	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel		OPEN-DRAIN	2KX8	2K	-40 Cel		MATTE TIN	1010DDDR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	1 MHz	3.9 mm		5 ms	I2C	16384 bit	2.5 V	ALSO OPERATES AT 0.4MHZ AT 1.7-5.5 SUPPLY VOLTAGE		e3	40	260		.000006 Amp	4.925 mm		3
XCF02SVOG20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			2MX1	2M	-40 Cel		MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V			e3					6.5024 mm
XCF02SVOG20C0936	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		2097152 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			2MX1	2M	-40 Cel		Matte Tin (Sn)		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			2097152 bit	3 V			e3	30	260			6.5024 mm
DS28EC20P+	Analog Devices	EEPROM	INDUSTRIAL	6	SOC	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		C BEND	SERIAL	ASYNCHRONOUS	.9 mA	20480 words			5	1	SMALL OUTLINE	SOC6,.17	EEPROMs	40	1.27 mm	85 Cel			20KX1	2K	-40 Cel		Matte Tin (Sn) - annealed		DUAL			R-PDSO-C6	1	5.25 V	1.5 mm	200000 Write/Erase Cycles		3.76 mm	Not Qualified		1-WIRE	20480 bit	4 V			e3	30	260			3.94 mm
25LC640-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	5 mA	8192 words	5		3/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	2 MHz	3.9 mm	Not Qualified	5 ms	SPI	65536 bit	2.5 V			e3	30	260		.000005 Amp	4.9 mm		5
25LC256T-I/SNRVB	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	6 mA	32768 words	4.5			8	SMALL OUTLINE	SOP8,.23		200	1.27 mm	85 Cel			32KX8	32K	-40 Cel				DUAL	1	HARDWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	10 MHz	3.9 mm		5 ms	SPI	262144 bit	2.5 V							.000001 Amp	4.9 mm		4.5
CAT24C256HU4IGT3	Onsemi	EEPROM	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS	3 mA	32768 words	5		2/5	8	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.12,20	EEPROMs	100	.5 mm	85 Cel			32KX8	32K	-40 Cel		NICKEL PALLADIUM GOLD	1010DDDR	DUAL		HARDWARE	R-PDSO-N8	1	5.5 V	.55 mm	1000000 Write/Erase Cycles	.4 MHz	2 mm	Not Qualified	5 ms	I2C	262144 bit	1.8 V	100 YEAR DATA RETENTION		e4	30	260		.000001 Amp	3 mm
24LC16BT-I/SN	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS	3 mA	2048 words	5		2/5	8	SMALL OUTLINE	SOP8,.23	EEPROMs	200	1.27 mm	85 Cel			2KX8	2K	-40 Cel		Matte Tin (Sn) - annealed	1010MMMR	DUAL	1	HARDWARE	R-PDSO-G8	1	5.5 V	1.75 mm	1000000 Write/Erase Cycles	.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	16384 bit	2.5 V			e3	30	260		.000001 Amp	4.9 mm		5
24LC512-I/SM	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	5 mA	65536 words	4.5		3/5	8	SMALL OUTLINE	SOP8,.3	EEPROMs	200	1.27 mm	85 Cel			64KX8	64K	-40 Cel		MATTE TIN	1010DDDR	DUAL		HARDWARE	R-PDSO-G8	1	5.5 V	2.03 mm	1000000 Write/Erase Cycles	.4 MHz	5.23 mm	Not Qualified	5 ms	I2C	524288 bit	2.5 V			e3	40	260		.000001 Amp	5.245 mm
AT25256B-SSHL-T-537	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ						.000005 Amp	4.925 mm		5
AT25256B-SSHL-T-899	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	TS 16949	GULL WING	SERIAL	SYNCHRONOUS	10 mA	32768 words	5			8	SMALL OUTLINE	SOP8,.23		100	1.27 mm	85 Cel		3-STATE	32KX8	32K	-40 Cel				DUAL	1	HARDWARE/SOFTWARE	R-PDSO-G8		5.5 V	1.75 mm	1000000 Write/Erase Cycles	20 MHz	3.9 mm		5 ms	SPI	262144 bit	4.5 V	ALSO OPERATES AT 2.5V TO 5.5V @10MHZ AND 1.8V TO 5.5V @5MHZ						.000005 Amp	4.925 mm		5
24LC64-I/SNRVA	Microchip Technology	EEPROM	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS	3 mA	8192 words	5			8	SMALL OUTLINE			200	1.27 mm	85 Cel			8KX8	8K	-40 Cel		MATTE TIN		DUAL			R-PDSO-G8	1	5.5 V	1.75 mm		.4 MHz	3.9 mm	Not Qualified	5 ms	I2C	65536 bit	2.5 V	DATA RETENTION > 200 YEARS; 1000000 ERASE/WRITE CYCLES GUARANTEED		e3	30	260			4.9 mm
XCF01SVOG20CES	Xilinx	CONFIGURATION MEMORY	INDUSTRIAL	20	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		1048576 words	3.3			1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.65 mm	85 Cel			1MX1	1M	-40 Cel		MATTE TIN		DUAL			R-PDSO-G20	3	3.6 V	1.19 mm			4.4 mm	Not Qualified			1048576 bit	3 V			e3					6.5024 mm

EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.