Micron Technology - MT47H128M16RT-25EIT:C

MT8KTF51264HZ-1G9P1 by Micron Technology is a DDR3L DRAM MODULE with 512MX64 organization. It operates in synchronous mode, has a self-refresh feature, and a nominal voltage of 1.35V. It is commonly used in commercial applications requiring high memory density and single bank page burst access mode.

Micron Technology's MT47H32M16NF-25E:H is a DDR2 DRAM with 32MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage, synchronous mode, and self-refresh capability. Ideal for applications requiring high-speed memory access in devices like computers and networking equipment.

DDR2 DRAM; No. of Terminals: 84; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Interleaved Burst Length: 4,8;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

LPDDR4 DRAM; Temperature Grade: OTHER; No. of Terminals: 200; Package Code: BGA; Package Shape: RECTANGULAR; No. of Functions: 1;

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Access Time: .125 ns; JESD-30 Code: R-PBGA-B96;

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Pitch: .8 mm;

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

IS42S16800F-7TLI-TR by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating range. Ideal for industrial applications requiring high memory density and fast access times.

Infineon's S27KS0642GABHI020 DRAM features 8MX8 organization, operates at 200 MHz, and has a memory density of 67108864 bit. Suitable for applications requiring synchronous operation and common I/O type in a compact grid array package with very thin profile.

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TFBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B54;

Micron Technology's MT53E256M32D2DS-053AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Maximum Supply Voltage (Vsup): 1.17 V;

NT5CC256M16ER-EKH by Nanya Technology is a DDR DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and industrial temperature grade. Suitable for applications requiring high memory density and fast data processing in compact devices.