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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Access Mode	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Sequential Burst Length	Self Refresh	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Reverse Pinout	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Interleaved Burst Length	Length	Maximum Access Time
K4F6E3S4HM-MGCJ	Samsung Electro-mechanics	LPDDR4 DRAM	OTHER	200	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	ASYNCHRONOUS		536870912 words				1.1		32	GRID ARRAY				85 Cel			512MX32	512M		-25 Cel		BOTTOM		R-PBGA-B200							17179869184 bit
MT41K256M8DA-125AAT:K	Micron Technology	DDR3L DRAM	AUTOMOTIVE	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	195 mA	268435456 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	125 Cel		3-STATE	256MX8	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78		1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	10.5 mm
MT40A256M16LY-062EAUT:F	Micron Technology	DDR4 DRAM	AUTOMOTIVE	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	60 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel		OPEN-DRAIN	256MX16	256M	1.14 V	-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V			NOT SPECIFIED	NOT SPECIFIED	.05 Amp	8	13.5 mm
MT53E512M32D1ZW-046AUT:B	Micron Technology	LPDDR4 DRAM		200	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		536870912 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA200,12X20,32/25		.8 mm	125 Cel			512MX32	512M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.05 mm	2133 MHz	10 mm		17179869184 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
NT5CC128M16JR-EK	Nanya Technology	DDR DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			128MX16	128M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
EDD5116AGTA-5B-E	Elpida Memory	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	300 mA	33554432 words	2,4,8	YES	COMMON	2.5	2.5	16	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel		3-STATE	32MX16	32M		0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e6	NOT SPECIFIED	NOT SPECIFIED	.005 Amp	2,4,8	22.22 mm	.7 ns
MT40A256M16LY-062E:FTR	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	312 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	7.5 mm		4294967296 bit	1.14 V		e1	30	260	.003 Amp	8	13.5 mm
MT46V16M16P-5BIT:MTR	Micron Technology	DDR1 DRAM	INDUSTRIAL	66	TSSOP		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		16777216 words		YES		2.6		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	85 Cel			16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G66		2.7 V	1.2 mm		10.16 mm		268435456 bit	2.5 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	.7 ns
IS42S32800J-7TLI	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	170 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3		32	SMALL OUTLINE, THIN PROFILE	TSSOP86,.46,20		.5 mm	85 Cel		3-STATE	8MX32	8M		-40 Cel	Tin (Sn)	DUAL	1	R-PDSO-G86	3	3.6 V	1.2 mm	143 MHz	10.16 mm		268435456 bit	3 V	AUTO/SELF REFRESH	e3	10	260	.004 Amp	1,2,4,8	22.22 mm	5.4 ns
MT41K256M16HA-125	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				256MX16	256M				BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT41K512M16HA-107:A	Micron Technology	DDR3L DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		9 mm		8589934592 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			14 mm
MT48LC4M16A2P-6AAIT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		4194304 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			4MX16	4M		-40 Cel	Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.5 ns
MT53D1024M32D4DT-046AIT:D	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		1073741824 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	95 Cel			1GX32	1G		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.95 mm	2136.7 MHz	10 mm		34359738368 bit	1.06 V	SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX					16,32	14.5 mm
NT6AN512T32AV-J2	Nanya Technology	LPDDR4 DRAM	OTHER	200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words				1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	105 Cel			512MX32	512M		-30 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1 mm		10 mm		17179869184 bit	1.06 V	AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX						15 mm
IS43TR16256AL-125KBLI	Integrated Silicon Solution	DDR3L DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel			256MX16	256M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm		9 mm		4294967296 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	10	260			13 mm	.1 ns
MT40A256M16LY-062EIT:FTR	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	270 mA	268435456 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.26 V	1.2 mm	1600 MHz	7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260	.022 Amp	8	13.5 mm
MT48LC16M16A2P-75IT:D	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	125 mA	16777216 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	16MX16	16M		-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	268435456 bit	3 V	AUTO/SELF REFRESH	e3	30	260	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT53D1024M32D4DT-053AIT:D	Micron Technology	LPDDR4 DRAM
MT53E256M32D2DS-046IT:B	Micron Technology	LPDDR4 DRAM	INDUSTRIAL	200	VFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	85 Cel			256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	1.032 mm	2133 MHz	10 mm		8589934592 bit	1.06 V							14.5 mm
MT53E256M32D2DS-053AUT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel		3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT48LC8M16A2P-6A:LTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			8MX16	8M		0 Cel	MATTE TIN	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		134217728 bit	3 V	AUTO/SELF REFRESH	e3	30	260			22.22 mm	5.4 ns
MT48LC8M16A2TG-75:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			8MX16	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
NT5CC128M16JR-EKT	Nanya Technology	DDR DRAM	INDUSTRIAL	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		134217728 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			128MX16	128M		-40 Cel		BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		7.5 mm		2147483648 bit	1.283 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			13 mm
EDD5108AGTA-5B-E	Elpida Memory	DDR1 DRAM	COMMERCIAL	66	TSOP2	8192	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	300 mA	67108864 words	2,4,8	YES	COMMON	2.5	2.5	8	SMALL OUTLINE, THIN PROFILE	TSSOP66,.46	DRAMs	.65 mm	70 Cel		3-STATE	64MX8	64M		0 Cel		DUAL	1	R-PDSO-G66		2.7 V	1.2 mm	200 MHz	10.16 mm	Not Qualified	536870912 bit	2.3 V	AUTO/SELF REFRESH	e6	NOT SPECIFIED	NOT SPECIFIED	.005 Amp	2,4,8	22.22 mm	.7 ns
MT47H256M8EB-25E:C	Micron Technology	DDR2 DRAM	OTHER	60	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	250 mA	268435456 words	4,8	YES	COMMON	1.8	1.8	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA60,9X11,32	DRAMs	.8 mm	85 Cel		3-STATE	256MX8	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B60		1.9 V	1.2 mm	400 MHz	9 mm	Not Qualified	2147483648 bit	1.7 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	4,8	11.5 mm	.4 ns
MT48LC8M16A2TG-7EIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	330 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	143 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT40A1G16KNR-075:E	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	SINGLE BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words				1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			1GX16	1G		0 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		17179869184 bit	1.14 V	AUTO REFRESH		NOT SPECIFIED	NOT SPECIFIED			13.5 mm
MT48LC8M16A2TG-75:G	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	310 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M		0 Cel	Tin/Lead (Sn/Pb)	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0	30	235	.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT48LC8M16A2TG-75LIT:G	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	310 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	85 Cel		3-STATE	8MX16	8M		-40 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	133 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.002 Amp	1,2,4,8	22.22 mm	5.4 ns
MT40A256M16LY-062E:F	Micron Technology	DDR4 DRAM	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	DUAL BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			256MX16	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm		7.5 mm		4294967296 bit	1.14 V	AUTO/SELF REFRESH	e1	30	260			13.5 mm
MT41K256M8DA-125:K	Micron Technology	DDR3L DRAM	OTHER	78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	156 mA	268435456 words	8	YES	COMMON	1.35	1.35	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32	DRAMs	.8 mm	95 Cel		3-STATE	256MX8	256M		0 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B78	3	1.45 V	1.2 mm	800 MHz	8 mm	Not Qualified	2147483648 bit	1.283 V	AUTO/SELF REFRESH	e1	30	260	.012 Amp	8	10.5 mm	.225 ns
MT48LC2M32B2P-6AAIT:J	Micron Technology	SYNCHRONOUS DRAM	INDUSTRIAL	86	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS	AEC-Q100	GULL WING	SYNCHRONOUS		2097152 words		YES		3.3		32	SMALL OUTLINE, THIN PROFILE			.5 mm	85 Cel			2MX32	2M		-40 Cel		DUAL	1	R-PDSO-G86		3.6 V	1.2 mm		10.16 mm		67108864 bit	3 V	AUTO/SELF REFRESH						22.22 mm	5.4 ns
MT48LC8M16A2TG-7E:GTR	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		8388608 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	70 Cel			8MX16	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0					22.22 mm	5.4 ns
MT53E256M32D2DS-053AAT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	105 Cel		3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	1866 MHz	10 mm		8589934592 bit	1.06 V			NOT SPECIFIED	NOT SPECIFIED		16,32	14.5 mm
K4S561632J-UC75	Samsung	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP	8192	RECTANGULAR	PLASTIC/EPOXY		YES		CMOS		GULL WING		120 mA	16777216 words	1,2,4,8,FP		COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	16MX16	16M		0 Cel	TIN BISMUTH	DUAL		R-PDSO-G54	2			133 MHz		Not Qualified	268435456 bit			e6		260	.002 Amp	1,2,4,8		5.4 ns
MT53E256M32D2DS-046AUT:B	Micron Technology	LPDDR4 DRAM		200	VFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		268435456 words	16,32	YES	COMMON	1.1		32	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA200,12X22,32/25		.8 mm	125 Cel		3-STATE	256MX32	256M		-40 Cel		BOTTOM	1	R-PBGA-B200		1.17 V	.8 mm	2133 MHz	10 mm		8589934592 bit	1.06 V						16,32	14.5 mm
MT48LC8M16A2TG-6A:L	Micron Technology	SYNCHRONOUS DRAM	COMMERCIAL	54	TSOP2	4096	RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS	100 mA	8388608 words	1,2,4,8,FP	YES	COMMON	3.3	3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP54,.46,32	DRAMs	.8 mm	70 Cel		3-STATE	8MX16	8M		0 Cel	TIN LEAD	DUAL	1	R-PDSO-G54		3.6 V	1.2 mm	167 MHz	10.16 mm	Not Qualified	134217728 bit	3 V	AUTO/SELF REFRESH	e0			.0025 Amp	1,2,4,8	22.22 mm	5.4 ns
S27KL0642DPBHI020	Infineon Technologies	HYPERRAM		24	VBGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS	30 mA	8388608 words		YES	COMMON	3		8	GRID ARRAY, VERY THIN PROFILE	BGA24,5X5,40		1 mm	85 Cel		3-STATE	8MX8	8M		-40 Cel		BOTTOM	1	R-PBGA-B24	3	3.6 V	1 mm	200 MHz	6 mm		67108864 bit	2.7 V					.00025 Amp		8 mm
MT41K64M16TW-107AAT:J	Micron Technology	DDR3L DRAM		96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		67108864 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm				64MX16	64M			TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96		1.45 V	1.2 mm		8 mm		1073741824 bit	1.283 V	PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH	e1	30	260			14 mm
AS4C256M16D3LC-12BIN	Alliance Memory	DDR3L DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	235 mA	268435456 words	4,8	YES	COMMON	1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel		3-STATE	256MX16	256M		-40 Cel	TIN SILVER COPPER	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	7.5 mm		4294967296 bit	1.283 V		e1	30	260	.008 Amp	4,8	13.5 mm
MT40A1G16KH-062EAUT:E	Micron Technology	DDR4 DRAM		96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	299 mA	1073741824 words	8	YES	COMMON	1.2		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	125 Cel			1GX16	1G		-40 Cel		BOTTOM	1	R-PBGA-B96		1.26 V	1.2 mm	1600 MHz	9 mm		17179869184 bit	1.14 V	AUTO/SELF REFRESH				.043 Amp	8	13 mm
IS43TR16256B-125KBLI-TR	Integrated Silicon Solution	DDR3 DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	276 mA	268435456 words	4,8	YES	COMMON	1.5		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32		.8 mm	95 Cel			256MX16	256M	1.425 V	-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.575 V	1.2 mm	800 MHz	9 mm		4294967296 bit	1.425 V	AUTO/SELF REFRESH	e1	10	260	.029 Amp	4,8	13 mm
MT40A1G8SA-075:E	Micron Technology	DDR4 DRAM	OTHER	78	TFBGA	65536	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		1073741824 words		YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,6X13,32		.8 mm	85 Cel	NO		1GX8	1G		0 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm		7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH	e1				8	11 mm
AS4C512M16D3LA-10BCN	Alliance Memory	DDR DRAM MODULE	OTHER	96	TFBGA		RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		YES		1.35		16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	95 Cel			512MX16	512M		0 Cel		BOTTOM	1	R-PBGA-B96	3	1.425 V	1.2 mm		9 mm		8589934592 bit	1.275 V	AUTO/SELF REFRESH						13.5 mm
D2516ECMDXGJD-U	Kingston Technology Company	DDR3L DRAM	OTHER	96	BGA		RECTANGULAR	PLASTIC/EPOXY		YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		YES		1.35		16	GRID ARRAY				95 Cel			256MX16	256M		0 Cel		BOTTOM	1	R-PBGA-B96							4294967296 bit		SELF REFRESH
IS42S16320F-7TLI-TR	Integrated Silicon Solution	SYNCHRONOUS DRAM	INDUSTRIAL	54	TSOP2		RECTANGULAR	PLASTIC/EPOXY	FOUR BANK PAGE BURST	YES	1	CMOS		GULL WING	SYNCHRONOUS		33554432 words		YES		3.3		16	SMALL OUTLINE, THIN PROFILE			.8 mm	85 Cel			32MX16	32M		-40 Cel		DUAL	1	R-PDSO-G54		3.6 V	1.2 mm		10.16 mm		536870912 bit	3 V	AUTO/SELF REFRESH		NOT SPECIFIED	NOT SPECIFIED			22.22 mm	5.4 ns
MT40A1G8SA-062EAIT:E	Micron Technology	DDR4 DRAM		78	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS	190 mA	1073741824 words	8	YES	COMMON	1.2		8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA78,9X13,32		.8 mm	95 Cel		3-STATE	1GX8	1G		-40 Cel		BOTTOM	1	R-PBGA-B78		1.26 V	1.2 mm	1600 MHz	7.5 mm		8589934592 bit	1.14 V	AUTO/SELF REFRESH				.018 Amp	8	11 mm
AS4C512M16D3L-12BIN	Alliance Memory	DDR3L DRAM	INDUSTRIAL	96	TFBGA	8192	RECTANGULAR	PLASTIC/EPOXY	MULTI BANK PAGE BURST	YES	1	CMOS		BALL	SYNCHRONOUS	220 mA	536870912 words	8	YES	COMMON	1.35	1.35	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA96,9X16,32	DRAMs	.8 mm	85 Cel		3-STATE	512MX16	512M		-40 Cel	Tin/Silver/Copper (Sn/Ag/Cu)	BOTTOM	1	R-PBGA-B96	3	1.45 V	1.2 mm	800 MHz	9 mm	Not Qualified	8589934592 bit	1.283 V	AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY	e1			.011 Amp	8	14 mm	.225 ns

DRAM

DRAM, or Dynamic Random Access Memory, is a type of volatile computer memory that stores data in a digital format. It is commonly used in personal computers, laptops, mobile devices, and other digital devices.

DRAM stores digital data as a charge on a capacitor. Each capacitor in DRAM represents one bit of data, and the state of the capacitor is refreshed periodically to maintain its charge. The refreshing process is necessary because the charge on the capacitor leaks over time, leading to data loss. The refreshing process is managed by a control circuitry that is integrated into the DRAM module.

DRAM is an important component of modern computer systems because it provides fast access to data for the processor. DRAM access times are measured in nanoseconds, which is much faster than access times for secondary storage devices like hard drives or solid-state drives. DRAM is also cheaper and more energy-efficient than other types of computer memory.

There are different types of DRAM, including SDRAM (Synchronous DRAM), DDR SDRAM (Double Data Rate Synchronous DRAM), and GDDR SDRAM (Graphics Double Data Rate Synchronous DRAM). These different types of DRAM have different characteristics, such as speed, capacity, and power consumption, and are used in different types of computer systems.

One of the disadvantages of DRAM is that it is volatile, which means that it loses data when the power is turned off. To prevent data loss, DRAM is typically used in conjunction with non-volatile storage devices like hard drives or solid-state drives, which can store data even when the power is turned off.