Varactor Diodes

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

MBV109T1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

125 Cel

TIN LEAD

R-PDSO-G3

Not Qualified

.28 W

29 pF

10.34 %

30 V

e0

SILICON

5

MV2101G

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH Q, HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

MV1404

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

200

GLASS

SINGLE

HYPERABRUPT

1

LONG FORM

125 Cel

O-LALF-W2

ISOLATED

Not Qualified

.4 W

120 pF

DO-204AA

20 %

12 V

SILICON

10

1N5705

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

325

GLASS

SINGLE

ABRUPT

.00000002 uA

1

60 V

LONG FORM

Varactors

60 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

39 pF

DO-7

20 %

65 V

e0

SILICON

3.2

SVC321B

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

CYLINDRICAL

16 V

100 Cel

O-PBCY-T2

3 %

16 V

SILICON

15.5

MV2101ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

450

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

6.8 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

SVC390

Onsemi

VARIABLE CAPACITANCE DIODE

NO

200

Varactors

16 V

50 pF

1N5451

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

300

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

39 pF

DO-7

20 %

30 V

e0

SILICON

2.6

MV2109RLRPG

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN SILVER COPPER

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e1

260

SILICON

2.5

1N5444

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

400

GLASS

SINGLE

ABRUPT

.02 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

12 pF

DO-7

20 %

30 V

e0

SILICON

2.6

1N4791

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.005 uA

1

20 V

LONG FORM

Varactors

20 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

18 pF

DO-7

20 %

22 V

e0

SILICON

2.36

MMBV809LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

75

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN

R-PDSO-G3

1

Not Qualified

.225 W

5.3 pF

HIGH RELIABILITY

TO-236AB

15.09 %

20 V

e3

30

260

SILICON

1.8

MMVL229AT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

15 V

TIN LEAD

R-PDSO-G2

Not Qualified

15 pF

6.67 %

e0

SILICON

2

1N5464

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

550

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

12 pF

DO-7

20 %

30 V

e0

SILICON

2.8

1N5456A

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

175

GLASS

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

.4 W

100 pF

DO-204AA

10 %

30 V

SILICON

2.7

MMBV109LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-236AB

10.34 %

30 V

e0

30

235

SILICON

5

1N4807

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

90 V

LONG FORM

Varactors

90 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

22 pF

DO-7

20 %

99 V

e0

SILICON

2.35

1S553T-HP

Onsemi

MMBV809LT3

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

75

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

TIN LEAD

R-PDSO-G3

1

Not Qualified

.225 W

5.3 pF

HIGH RELIABILITY

TO-236AB

15.09 %

20 V

e0

235

SILICON

1.8

LV2205RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

SVC704

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

ULTRA HIGH FREQUENCY

.05 uA

1

10 V

SMALL OUTLINE

16 V

150 Cel

R-PDSO-F3

28 pF

7.14 %

16 V

SILICON

6

MV2105RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

SVC203SPA

Onsemi

VARIABLE CAPACITANCE DIODE

SINGLE

THROUGH-HOLE

3

NO

RECTANGULAR

60

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

IN-LINE

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

R-PSIP-T3

Not Qualified

.1 W

7.64 %

16 V

SILICON

2.1924

SVC344

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

WIRE

3

NO

ROUND

200

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

CYLINDRICAL

Varactors

30 V

O-PBCY-W3

Not Qualified

430 pF

TO-92

2 %

30 V

SILICON

15

1N4804

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

100 V

LONG FORM

Varactors

100 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

12 pF

DO-7

20 %

110 V

e0

SILICON

2.35

MMBV2105L

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

30 V

TIN LEAD

R-PDSO-G3

Not Qualified

.225 W

15 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e0

SILICON

2.5

SVC364M

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

2 BANKS, COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.31 %

16 V

SILICON

17.5

MV1630

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

1

LONG FORM

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

18 pF

DO-204AA

10 %

20 V

e0

SILICON

2

MV209RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY

TO-92

10.34 %

30 V

e0

SILICON

5

1N4789

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.005 uA

1

25 V

LONG FORM

Varactors

25 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

12 pF

DO-7

20 %

28 V

e0

SILICON

2.35

1N5462

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

600

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

8.2 pF

DO-7

20 %

30 V

e0

SILICON

2.8

MV209ZL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

MV209RL1

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

CYLINDRICAL

125 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.2 W

29 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10.34 %

30 V

e0

SILICON

5

SVCA361

Onsemi

VARIABLE CAPACITANCE DIODE

NO

200

Varactors

16 V

500 pF

1N5442

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

450

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

8.2 pF

DO-7

20 %

30 V

e0

SILICON

2.5

MV2109RLRM

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

SILICON

2.5

1N5440

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

450

GLASS

SINGLE

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

4.7 pF

20 %

30 V

e0

SILICON

2.4

MMBV2109LT1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

30 V

TIN

R-PDSO-G3

1

Not Qualified

.225 W

33 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10 %

30 V

e3

30

260

SILICON

2.5

MMBV409LT1

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

20 V

Tin/Lead (Sn/Pb)

R-PDSO-G3

1

Not Qualified

.225 W

29 pF

HIGH Q, HIGH RELIABILITY

TO-236AB

10.34 %

20 V

e0

30

235

SILICON

1.5

LV2205RLRP

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

400

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

15 pF

HIGH RELIABILITY

TO-92

10 %

25 V

e0

SILICON

2.5

1N5475

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

225

GLASS

SINGLE

ABRUPT

.00000002 uA

1

25 V

LONG FORM

Varactors

30 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

82 pF

DO-7

20 %

30 V

e0

SILICON

2.9

SVC321D

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

.1 uA

1

9 V

CYLINDRICAL

16 V

100 Cel

O-PBCY-T2

3 %

16 V

SILICON

15.5

MMVL2105T1G

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

.2 W

15 pF

HIGH RELIABILITY

10 %

30 V

e3

SILICON

2.5

1N5686

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

.00000002 uA

1

40 V

LONG FORM

Varactors

40 V

175 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

18 pF

DO-7

20 %

45 V

e0

SILICON

3.2

SVC354R

Onsemi

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

200

PLASTIC/EPOXY

COMPLEX

3

SMALL OUTLINE

Varactors

16 V

R-PDSO-G6

Not Qualified

3.26 %

16 V

SILICON

17.5

MV2109RL

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

1

CYLINDRICAL

150 Cel

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY, EUROPEAN PART NUMBER

TO-92

10 %

30 V

e0

SILICON

2.5

1N4800

Onsemi

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

15

GLASS

SINGLE

ABRUPT

.000000005 uA

1

15 V

LONG FORM

Varactors

15 V

150 Cel

-65 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.5 W

100 pF

DO-7

20 %

17 V

e0

SILICON

2.24

MV2109RLRA

Onsemi

VARIABLE CAPACITANCE DIODE

BOTTOM

THROUGH-HOLE

2

NO

ROUND

200

PLASTIC/EPOXY

SINGLE

ABRUPT

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

CYLINDRICAL

Varactors

30 V

TIN LEAD

O-PBCY-T2

Not Qualified

.28 W

33 pF

HIGH RELIABILITY

TO-92

10 %

30 V

e0

235

SILICON

2.5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.