Varactor Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
BB147	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2			Not Qualified		102 pF	2% MATCHED SETS OF 8 DIODES ARE AVAILABLE		9.8 %		e3			SILICON	35
BB911/A	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified			MATCHED TO 2.5%	DO-34						SILICON	23.3
BB182-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
934033280115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		39.3 pF			6.36 %		e3			SILICON	14.5
BB181,335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	30 V			TIN		1									e3	30	260
BB804Y212	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BBY39TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3			Not Qualified										SILICON	8
BB133-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		42 pF	0.7% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE		9.52 %	30 V				SILICON	14
BB182B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-F2			Not Qualified		50 pF	EXCELLENT MATCHING TO 2% DMA, HIGH LINEARITY, LOW SERIES RESISTANCE		6 %	34 V				SILICON	17
BB190T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		15 pF								SILICON	1.55
BB204G	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	THROUGH-HOLE	3	NO	ROUND	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.05 uA	2	30 V	CYLINDRICAL			100 Cel			O-PBCY-T3			Not Qualified		14 pF		TO-92						SILICON	2.5
BB181,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE				YES									Varactors	30 V			TIN		1									e3	30	260
BB152	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
BB181T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified					36 %		e3			SILICON	12
BB164	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2			Not Qualified		69 pF	2% MATCHED SETS OF 15 DIODES ARE AVAILABLE				e3			SILICON	19.5
934055435115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE						R-PDSO-F2			Not Qualified		5.3 pF			9.52 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
BB141,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE		Not Qualified		4.2 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BB417-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.1 uA	1	20 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified										SILICON	2
BB804TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE						R-PDSO-G3			Not Qualified										SILICON	1.65
934040040135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		18.75 pF					e3			SILICON	8.2
BB119-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		2 uA	1	15 V	LONG FORM			200 Cel			O-LALF-W2		ISOLATED	Not Qualified										SILICON	1.3
934018010135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		67.5 pF			11.11 %		e3			SILICON	24
BB141T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	8 V	150 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		4.2 pF					e3			SILICON	1.65
BB181,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified					36 %		e3	30	260	SILICON	12
934033280135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		39.3 pF			6.36 %		e3			SILICON	14.5
BB515	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		17.75 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES		9.85 %	30 V				SILICON	8
BB181	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	150 Cel	-55 Cel	Tin (Sn)	R-PDSO-F2	1		Not Qualified					36 %		e3	30	260	SILICON	12
BB911/A136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	23.3
934057931135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE
934047520115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		69 pF	EXCELLENT MATCHING TO 2% DMA				e3			SILICON	19.5
BB208-02,135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	10 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified		10.1 pF					e3	30	260	SILICON	3.7
934047500335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF			8.77 %	32 V	e3			SILICON	20.6
BBY42T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	32 V	85 Cel			R-PDSO-G3			Not Qualified		24 pF		TO-236AB		30 V				SILICON	12
BB135/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		19.25 pF				30 V	e3			SILICON	8.9
934042220115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		57 pF			8.77 %	32 V	e3			SILICON	20.6
BB149A/TM	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified					7.7 %					SILICON	8.45
934055065135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		19.1 pF					e3			SILICON	1.45
BB145,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE		Not Qualified		6.9 pF				6 V	e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB804G235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
BB150115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified	.2 W					30 V				SILICON	14
BB184,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	13 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		14 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		9.29 %	13 V	e3			SILICON	6
BB804-0	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			100 Cel			R-PDSO-G3			Not Qualified										SILICON	1.65
BB804R215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY	.02 uA	2	16 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G3			Not Qualified	.25 W					18 V				SILICON	1.65
934040030115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		39.3 pF					e3			SILICON	14.5
BB158T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF			6.36 %	30 V	e3			SILICON	14.5
BB909B116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			2.5% MATCHED SETS ARE AVAILABLE	DO-34		30 V				SILICON	12
BB207,235	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			2		SMALL OUTLINE	Varactors	15 V	125 Cel	-55 Cel	TIN	R-PDSO-G3	1		Not Qualified		81 pF		TO-236AB	6.17 %		e3	30	260	SILICON	2.6
BB901215	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G3			Not Qualified										SILICON	12

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.