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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | 1N5475 |
| Description | VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND; |
| Datasheet | 1N5475 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | GLASS |
| Variable Capacitance Diode Classification: | ABRUPT |
| Config: | SINGLE |
| Diode Type: | VARIABLE CAPACITANCE DIODE |
| Sub-Category: | Varactors |
| Surface Mount: | NO |
| Terminal Finish: | TIN LEAD |
| Maximum Reverse Current: | .00000002 uA |
| No. of Terminals: | 2 |
| Minimum Diode Capacitance Ratio: | 2.9 |
| Terminal Position: | AXIAL |
| Package Style (Meter): | LONG FORM |
| Minimum Quality Factor: | 225 |
| JESD-30 Code: | O-LALF-W2 |
| Minimum Breakdown Voltage: | 30 V |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | ISOLATED |
| Reverse Test Voltage: | 25 V |
| Maximum Repetitive Peak Reverse Voltage: | 30 V |
| Diode Cap Tolerance: | 20 % |
| JEDEC-95 Code: | DO-7 |
| JESD-609 Code: | e0 |
| Minimum Operating Temperature: | -65 Cel |
| Nominal Diode Capacitance: | 82 pF |
| Diode Element Material: | SILICON |
| Qualification: | Not Qualified |
| Maximum Power Dissipation: | .4 W |
