PIN Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
ASML-5822-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	MATTE TIN	R-PDSO-G3	.6 ohm	1		Not Qualified				.07 us		50 V	e3	20	260	SILICON
ASML-5822-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	MATTE TIN	R-PDSO-G3	.6 ohm	1		Not Qualified				.07 us		50 V	e3	20	260	SILICON
ASML-5829-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.375 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	LIMITER		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified				.2 us		100 V	e3			SILICON
BAP51-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-F2	2.5 ohm	1		Not Qualified	.715 W	.4 pF				60 V	e3	30	260	SILICON	100 MHz
BAP51-02,315	NXP Semiconductors	PIN DIODE																									1											260
BAR64-02V-H6327	Infineon Technologies	PIN DIODE				YES			1 mA								0 V		PIN Diodes		125 Cel			MATTE TIN		20 ohm	1				.17 pF		1.55 us		150 V	e3		260		100 MHz
MMBV3700LT1G	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	1 ohm	1		Not Qualified	.2 W	1 pF	HIGH VOLTAGE		TO-236AB	200 V	e3	30	260	SILICON
MPL4700-206/TR	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	X BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel		-55 Cel		R-XBCC-N2	2 ohm									25 V				SILICON
MPL4701-206	Microchip Technology	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE	ULTRA HIGH FREQUENCY TO X BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	10 V	CHIP CARRIER	PIN Diodes		150 Cel	LIMITER	-55 Cel	GOLD	R-XBCC-N2	2.5 ohm									15 V	e4			SILICON	1000 MHz
1SV233-TB-E	Onsemi	PIN DIODE												POSITIVE-INTRINSIC-NEGATIVE										TIN BISMUTH			1									e6	30	260	SILICON
BA595E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	7 ohm	1		Not Qualified				1.6 us		50 V	e3			SILICON
BAP64-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.24 W	.52 pF		1.55 us		100 V	e3	30	260	SILICON	100 MHz
BAR65-02V-H6327	Infineon Technologies	PIN DIODE				YES			5 mA								0 V		PIN Diodes		125 Cel			MATTE TIN		.95 ohm	1				.5 pF		.08 us			e3		260		100 MHz
CLA4603-219	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	10 mA	SINGLE	KA BAND			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	MICROWAVE	PIN Diodes		175 Cel	LIMITER	-65 Cel		O-CDMW-N2	2 ohm			Not Qualified		.2 pF		.005 us		20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
CLA4608-000	Skyworks Solutions	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED	10 mA	SINGLE	KA BAND		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP	PIN Diodes		175 Cel	LIMITER	-65 Cel		S-XUUC-N1	1.2 ohm		CATHODE	Not Qualified				.1 us		120 V		40	260	SILICON	100 MHz
HSMP-3814#L31	Hewlett Packard	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR			R-PDSO-G3				Not Qualified	.25 W		LOW DISTORTION	1.5 us		100 V				SILICON
HSMP-3814-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1		Not Qualified		.27 pF	LOW DISTORTION	1.5 us		100 V	e4	20	260	SILICON	100 MHz
HSMP-3814L31	Agilent Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		Tin/Lead (Sn/Pb)	R-PDSO-G3	4 ohm			Not Qualified	.25 W			1.5 us		100 V	e0			SILICON	100 MHz
UM9415	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	50 mA	SINGLE			4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		175 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us		50 V	e0			SILICON	100 MHz
UM9415B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-XALF-W2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us		50 V	e0			SILICON	100 MHz
UM9415SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm		ISOLATED	Not Qualified	2.5 W	4 pF	LOW DISTORTION	5 us		50 V	e0			SILICON	100 MHz
BAP50-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF				50 V	e3	30	260	SILICON	100 MHz
BAP50-03-TP	Micro Commercial Components	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1.11 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel		-65 Cel	MATTE TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.2 W						e3	10	260	SILICON
BAP65-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1		Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us		30 V	e3	30	260	SILICON	100 MHz
BAR61E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		3		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G4		1	ANODE AND CATHODE	Not Qualified	.25 W			1 us			e3			SILICON
BAR64-05W-E6327	Infineon Technologies	PIN DIODE				YES			1 mA	COMMON CATHODE, 2 ELEMENTS						2	0 V		PIN Diodes		125 Cel					20 ohm	1				.17 pF		1.55 us		150 V			260		100 MHz
HSMP-3802-TR1	Agilent Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.37 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		TIN LEAD	R-PDSO-G3	2 ohm			Not Qualified	.25 W	.37 pF	LOW DISTORTION	1.8 us		100 V	e0			SILICON	100 MHz
HSMP-3824-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS			.8 pF	POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	.6 ohm	1		Not Qualified	.25 W	.6 pF	LOW DISTORTION	.07 us		50 V	e4	20	260	SILICON	100 MHz
HSMP-386C-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	22 ohm	1		Not Qualified		.2 pF	LOW DISTORTION	.5 us		50 V	e3	20	260	SILICON	100 MHz
RN731VTE-17	ROHM	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	35 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		TIN SILVER COPPER	R-PDSO-F2	7 ohm			Not Qualified	.1 W	.4 pF	HIGH RELIABILITY			50 V	e1			SILICON	100 MHz
SMP1304-004LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY TO L BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR		Matte Tin (Sn)	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W		LOW DISTORTION	1 us			e3	40	260	SILICON
SMP1321-011LF	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	HIGH FREQUENCY TO S BAND		.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				SWITCHING		MATTE TIN	R-PDSO-G2	2 ohm	1	ISOLATED	Not Qualified	.25 W			.4 us			e3		260	SILICON
SMP1331-079LF	Skyworks Solutions	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	HIGH FREQUENCY TO X BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-PDSO-F2	14.5 ohm				.25 W	.18 pF	LOW DISTORTION	.6 us				NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
SQM1150	M/a-com Technology Solutions	PIN DIODE				YES			50 mA							1	50 V		PIN Diodes		150 Cel					.35 ohm					1 pF		1 us		200 V					120 MHz
UM9401SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	50 mA	SINGLE	HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	LONG FORM	PIN Diodes			SWITCHING		TIN LEAD	O-LELF-R2	1 ohm		ISOLATED	Not Qualified	1.5 W	1.5 pF	LOW DISTORTION	2 us		50 V	e0			SILICON	100 MHz
BAP50-03,135	NXP Semiconductors	PIN DIODE				YES			.5 mA								1 V		PIN Diodes		150 Cel			TIN		40 ohm	1				.55 pF				50 V	e3	30	260		100 MHz
BAR141E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us		100 V	e3			SILICON
BAR151E6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	12 ohm	1			.25 W		LOW DISTORTION	1 us		100 V	e3			SILICON
BAR63-02V-H6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2 ohm	1			.25 W	.25 pF		.075 us		50 V	e3		260	SILICON	100 MHz
BAR63-03WE6433	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING			R-PDSO-G2	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us		50 V			260	SILICON	100 MHz
BAR6305WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us		50 V	e3			SILICON
BAR6306WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us		50 V	e3			SILICON
BAR6405E6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G3	1.35 ohm				.25 W			1.55 us		150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
CLA4607-219	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	10 mA	SINGLE	KA BAND			POSITIVE-INTRINSIC-NEGATIVE		1	0 V	MICROWAVE	PIN Diodes		175 Cel	LIMITER	-65 Cel		O-CDMW-N2	2 ohm			Not Qualified		.2 pF		.05 us		120 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	500 MHz
DC2103A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	.25 W		AVAILABLE IN BOTH POLARITIES	2 us		500 V				SILICON
HSMP-386C-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	22 ohm	1		Not Qualified		.2 pF	LOW DISTORTION	.5 us		50 V	e3	20	260	SILICON	100 MHz
HSMP-389C	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	VERY HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-G3	2.5 ohm							.2 us		100 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
HSMP-389C-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified		.2 pF		.2 us		100 V	e3	20	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.