PIN Diodes

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency	Reference Standard
MA4L021-134	TE Connectivity	PIN DIODE				YES			10 mA								0 V		PIN Diodes		125 Cel					1.5 ohm					.2 pF		.01 us	30 V					500 MHz
UM6606A	Microchip Technology	PIN DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	100 V	MICROWAVE	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XEMW-N2	2.5 ohm			Not Qualified	6 W	.4 pF		1 us	600 V	e0			SILICON	100 MHz
BAR6502VH6327XTSA1	Infineon Technologies	PIN DIODE																						MATTE TIN			1								e3
UM6601B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	100 V	LONG FORM	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm		ISOLATED	Not Qualified	2.5 W	.4 pF		1 us	100 V	e0			SILICON	100 MHz
UM6606SM	Microchip Technology	PIN DIODE	END	WRAP AROUND	2	YES	ROUND	UNSPECIFIED		SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		LONG FORM				ATTENUATOR; SWITCHING		TIN LEAD	O-XELF-R2	2.5 ohm		ISOLATED	Not Qualified	4.5 W			1 us	600 V	e0			SILICON
SKY16602-632LF	Skyworks Solutions	PIN DIODE
CLA4607-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	PLASTIC/EPOXY	10 mA	SINGLE			.35 pF	SCHOTTKY		1		SMALL OUTLINE			150 Cel	LIMITER	-55 Cel	TIN	S-PDSO-N2	2 ohm	1	CATHODE		1.3 W	.3 pF		.05 us	180 V	e3		260	SILICON	500 MHz
BAR88-02VE6327	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm	1			.25 W	.25 pF		.5 us	80 V	e3		260	SILICON	100 MHz
DC2118A	Gec Plessey Semiconductors	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING	-55 Cel		O-CEMW-N2	1 ohm			Not Qualified	.25 W			.05 us	100 V				SILICON
UM6610B	Microchip Technology	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	UNSPECIFIED	100 mA	SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	100 V	LONG FORM	PIN Diodes		175 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-XALF-W2	2.5 ohm		ISOLATED	Not Qualified	2.5 W	.4 pF		1 us	1000 V	e0			SILICON	100 MHz
BAR63-04E6327	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W	.25 pF		.075 us	50 V	e3		260	SILICON	100 MHz
BAR6303WE6327HTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G2	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR8802VE6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W			.5 us	80 V	e3			SILICON
HSMP-3814	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		TIN	R-PDSO-G3	4 ohm	1		Not Qualified	.25 W	.35 pF	LOW DISTORTION	1.5 us	100 V	e3			SILICON	100 MHz
MA4P7470F-1072T	TE Connectivity	PIN DIODE				YES			100 mA								100 V		PIN Diodes		125 Cel					.8 ohm					700000 pF		6.5 us						100 MHz
SMP1330-040LF	Skyworks Solutions	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			175 Cel	LIMITER	-55 Cel		R-PBCC-N2	1.9 ohm	1		Not Qualified	.75 W			.004 us	20 V		40	260	SILICON
BAR6304WH6327XTSA1	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G3	2 ohm	1			.25 W			.075 us	50 V	e3			SILICON
BAR6405WH6327XTSA1	Infineon Technologies	PIN DIODE												POSITIVE-INTRINSIC-NEGATIVE										TIN			1								e3			SILICON
BAR88-02VE6127	Infineon Technologies	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	L BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	SWITCHING	-55 Cel	MATTE TIN	R-PDSO-F2	2.5 ohm				.25 W		LOW DISTORTION	.5 us	80 V	e3			SILICON
HSMP-389C-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HSMP-3814-TR1	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel			TIN LEAD	R-PDSO-G3	3 ohm			Not Qualified		.35 pF			100 V	e0			SILICON	100 MHz
HSMP-3824-BLK	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2	20 V	SMALL OUTLINE	PIN Diodes		150 Cel			TIN LEAD	R-PDSO-G3	1.5 ohm			Not Qualified		.6 pF		.07 us	50 V	e0			SILICON	100 MHz
HSMP-386C-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		MATTE TIN	R-PDSO-G3	22 ohm	1		Not Qualified		.2 pF	LOW DISTORTION	.5 us	50 V	e3	20	260	SILICON	100 MHz
MA4P604-131	TE Connectivity	PIN DIODE				YES			100 mA								100 V		PIN Diodes		175 Cel					1 ohm					.3 pF		3 us	1000 V
MPN1000-12	M/a-com Technology Solutions	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED	50 mA	SINGLE	HIGH FREQUENCY		.02 pF	POSITIVE-INTRINSIC-NEGATIVE		2	10 V	MICROWAVE			150 Cel	SWITCHING	-55 Cel		R-XDMW-F2	4 ohm				.25 W			.08 us	100 V				SILICON	1000 MHz
RN242CST2R	ROHM	PIN DIODE				YES			3 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V		PIN Diodes		150 Cel			MATTE TIN		3 ohm	1				.35 pF			30 V	e3		225	SILICON	100 MHz
RN242CST2RA	ROHM	PIN DIODE				YES			3 mA					POSITIVE-INTRINSIC-NEGATIVE			1 V		PIN Diodes		150 Cel					3 ohm					.35 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
DC2518A	Gec Plessey Semiconductors	PIN DIODE	UPPER	NO LEAD	1	YES	ROUND	UNSPECIFIED	100 mA	SINGLE	HIGH FREQUENCY TO KU BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP	PIN Diodes		150 Cel	SWITCHING	-55 Cel		O-XUUC-N1	1 ohm			Not Qualified	.25 W			500 us	50 V				SILICON
BAR63-04W-E6327	Infineon Technologies	PIN DIODE				YES			5 mA								5 V		PIN Diodes		150 Cel					2 ohm	1				.25 pF		.075 us	50 V			260		100 MHz
BAR6304WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-G3	2 ohm				.25 W			.075 us	50 V				SILICON
HSMP-3810-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	SINGLE			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1		Not Qualified		.27 pF	LOW DISTORTION	1.5 us	100 V	e4	20	260	SILICON	100 MHz
HSMP-386C-TR1	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN LEAD	R-PDSO-G3				Not Qualified			LOW DISTORTION	.5 us	50 V	e0			SILICON
HSMP386C	Broadcom	PIN DIODE				YES			10 mA								50 V		PIN Diodes		150 Cel					3 ohm					.2 pF			50 V		NOT SPECIFIED	NOT SPECIFIED		100 MHz
MA4GP022-277	M/a-com Technology Solutions	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE	KA BAND		.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			175 Cel	SWITCHING			S-XUUC-N1	1 ohm			Not Qualified	.25 W		TTL COMPATIBLE	.02 us	50 V		NOT SPECIFIED	NOT SPECIFIED	GALLIUM ARSENIDE
MA4P1250-1072T	TE Connectivity	PIN DIODE				YES			50 mA								50 V		PIN Diodes		175 Cel					.75 ohm					.8 pF		8 us	50 V					100 MHz
SKY16603-632LF	Skyworks Solutions
SMP1304-004	Skyworks Solutions	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS	HIGH FREQUENCY TO L BAND		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		Tin/Lead (Sn/Pb)	R-PDSO-G3	2 ohm	1		Not Qualified	.25 W		LOW DISTORTION	1 us	200 V	e0	30	245	SILICON	100 MHz
DC2011A	Gec Plessey Semiconductors	PIN DIODE	UPPER	NO LEAD	1	YES	ROUND	UNSPECIFIED	25 mA	SINGLE	HIGH FREQUENCY TO KU BAND		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP	PIN Diodes		150 Cel	SWITCHING	-55 Cel		O-XUUC-N1	3 ohm			Not Qualified	.25 W			2 us	100 V				SILICON
HSMP-3890-TR1G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		NICKEL PALLADIUM GOLD	R-PDSO-G3	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e4	20	260	SILICON	100 MHz
MA4P7006F-1072T	TE Connectivity	PIN DIODE				YES			100 mA								100 V		PIN Diodes		175 Cel					.8 ohm					700000 pF		3 us	600 V					100 MHz
UM7512CR	Microchip Technology	PIN DIODE	UPPER	NO LEAD	1	NO	ROUND	UNSPECIFIED		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		POST/STUD MOUNT				ATTENUATOR; SWITCHING		TIN LEAD	O-XUPM-N1	1 ohm		ANODE	Not Qualified	10 W		LOW DISTORTION, METALLURGICALLY BONDED	3.5 us		e0			SILICON
BAR6403WE6327XT	Infineon Technologies	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	MEDIUM FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	ATTENUATOR; SWITCHING	-55 Cel		R-PDSO-G2	1.35 ohm				.25 W		LOW DISTORTION	1.55 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON		AEC-Q101
BAR63-02V-E6327	Infineon Technologies	PIN DIODE				YES			5 mA								5 V		PIN Diodes		150 Cel					2 ohm	1				.25 pF		.075 us	50 V			260		100 MHz
CLA4605-085LF	Skyworks Solutions	PIN DIODE	DUAL	NO LEAD	2	YES	SQUARE	UNSPECIFIED		SINGLE	HIGH FREQUENCY TO C BAND		.045 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			175 Cel	LIMITER			S-XDSO-N2	2 ohm	1	CATHODE	Not Qualified	3 W			.007 us	30 V			260	SILICON
HSMP-3814-BLK	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel			TIN LEAD	R-PDSO-G3	3 ohm			Not Qualified		.35 pF			100 V	e0			SILICON	100 MHz
HSMP-3814-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	100 mA	COMMON CATHODE, 2 ELEMENTS			.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR		NICKEL PALLADIUM GOLD	R-PDSO-G3	3 ohm	1		Not Qualified		.27 pF	LOW DISTORTION	1.5 us	100 V	e4	20	260	SILICON	100 MHz
ASML-5822	Broadcom	PIN DIODE																																		NOT SPECIFIED	NOT SPECIFIED
ASML-5822-BLKG	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	MATTE TIN	R-PDSO-G3	.6 ohm	1		Not Qualified				.07 us	50 V	e3	20	260	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.