Vpt Components - JANS2N2907AUBC

The NXP Semiconductors BFU530WX is an RF BJT transistor with NPN polarity, suitable for amplifier applications in the L Band. It has a max operating temperature of 150°C, a collector-emitter voltage of 12V, and a transition frequency of 11GHz. This small outline transistor comes in a plastic/epoxy package with gull wing terminals for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Finish: TIN LEAD;

RF Small Signal Bipolar Transistors; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .02 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .4 A;

NPN AND PNP; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .037 A; Maximum Time At Peak Reflow Temperature (s): 30;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .025 A; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

MMBTH81D87Z by National Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the very high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly.

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; JEDEC-95 Code: TO-92; Maximum Collector-Base Capacitance: .9 pF;

The NXP Semiconductors BFS20,215 is a single NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 20V and a min DC current gain of 40. It operates in the very high frequency band up to 450MHz and is suitable for applications requiring high-frequency amplification or switching.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .03 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 700 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;

RF Small Signal Bipolar Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6; Terminal Finish: TIN BISMUTH;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;