Vishay Intertechnology - TEMD5110X01

AVALANCHE PHOTODIODE;

Photo Diodes; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000025 s;

OP950 by Optotek is a single configuration PIN photodiode with a size of 1.58 mm. It operates in temperatures ranging from -40 to 100 °C and has a max reverse breakdown voltage of 60 V. This photodiode, which responds from visible to infrared range, is ideal for applications requiring fast response time and low dark current.

AVALANCHE PHOTODIODE; Maximum Reverse Voltage: 100 V; Maximum Dark Current: 30 nA; Minimum Operating Temperature: -40 Cel; Semiconductor Material: InGaAs; Maximum Operating Temperature: 85 Cel;

PIN PHOTODIODE; Terminal Finish: TIN; Minimum Operating Temperature: -40 Cel; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Peak Wavelength (nm): 875;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium; Maximum Response Time: .0000000000003 s;

The Vishay Intertechnology BPV10NF is a 5mm round PIN photodiode with a peak wavelength of 940nm. It has a min reverse breakdown voltage of 60V and can operate at temperatures ranging from -40°C to 100°C. This photodiode is commonly used in applications requiring infrared detection and has a fast response time of 0.0000000025s.

PIN PHOTODIODE; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Minimum Reverse Breakdown Voltage: 40 V; Shape: ROUND; Maximum Dark Current: 5 nA;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 920; Nominal Light Current: .17 mA; Infrared (IR) Range: YES;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Size: 3.9 mm; Semiconductor Material: Germanium; Maximum Operating Temperature: 80 Cel;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Maximum Operating Temperature: 70 Cel; JESD-609 Code: e0;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 30 V; Maximum Dark Current: 5 nA; Maximum Response Time: .00000001 s; Maximum Operating Temperature: 100 Cel;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 7 nA; Semiconductor Material: Silicon; JESD-609 Code: e0;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 40 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 300 nA;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Size: 2.4 mm; Nominal Light Current: .035 mA; Minimum Reverse Breakdown Voltage: 60 V;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Maximum Reverse Voltage: 60 V;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 50 V; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00000003 s; Maximum Dark Current: 5 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 20 V; Maximum Dark Current: 1 nA;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 420; Size: 1 mm; Semiconductor Material: Silicon; Minimum Reverse Breakdown Voltage: 24.2 V;

PIN PHOTODIODE;