Handok - HP3F

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Minimum Reverse Breakdown Voltage: 24.2 V; Minimum Operating Temperature: -40 Cel; Configuration: COMPLEX;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Maximum Dark Current: 40 nA; Configuration: SINGLE; No. of Functions: 1; Shape: RECTANGULAR; Nominal Light Current: .04 mA;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Size: 1.78 mm; Infrared (IR) Range: YES; JESD-609 Code: e3; Configuration: SINGLE;

Photo Diodes; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PIN PHOTODIODE; Size: 2 mm; Maximum Operating Temperature: 80 Cel; Shape: ROUND; Peak Wavelength (nm): 1000; Infrared (IR) Range: YES;

TEMD5110X01 by Vishay Intertechnology is a single configuration photodiode with a peak wavelength of 940 nm. It operates at temperatures ranging from -40 to 100 °C and has a min reverse breakdown voltage of 60 V. This rectangular-shaped PIN photodiode is suitable for applications requiring infrared detection in surface mount installations.

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -40 Cel; Configuration: COMPLEX; Maximum Operating Temperature: 85 Cel; Minimum Reverse Breakdown Voltage: 24.2 V;

The Vishay Intertechnology TEMD5080X01 is a single PIN photodiode with peak wavelength of 940nm. It operates b/w -40°C to 110°C, with reverse breakdown voltage of 25V. Ideal for infrared applications, it has nominal light current of 0.05mA and max dark current of 10nA.

PIN PHOTODIODE; No. of Functions: 1; Size: 1.6 mm; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 1000; Minimum Reverse Breakdown Voltage: 20 V;

PIN PHOTODIODE; Minimum Operating Temperature: -40 Cel; Shape: SQUARE; No. of Functions: 1; Maximum Dark Current: .1 nA; Peak Wavelength (nm): 900;

PIN PHOTODIODE; Mounting Feature: RADIAL MOUNT; Peak Wavelength (nm): 935; Minimum Reverse Breakdown Voltage: 60 V; No. of Functions: 1; Size: 1.58 mm;

BPW-34 by Laser Components is a 3mm PIN photodiode with peak wavelength of 900nm. It operates b/w -40 to 100°C, has a reverse breakdown voltage of 60V, and response time of 0.00000035s. Ideal for IR applications, it features matte tin finish and through hole mounting.

BPW34FAS by Infineon Technologies is a PIN photodiode with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max dark current of 30nA and a max response time of 20ns. This photodiode is commonly used in applications such as light detection, optical communication, and industrial automation.

AVALANCHE PHOTODIODE;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000000005 s; Maximum Dark Current: 100 nA; Maximum Reverse Voltage: 180 V;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000035 s; No. of Functions: 1; Maximum Dark Current: 30 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Semiconductor Material: Silicon; JESD-609 Code: e0;

PIN PHOTODIODE; No. of Functions: 1; Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; Minimum Operating Temperature: -55 Cel; Size: 5.9 mm;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -30 Cel; Maximum Reverse Voltage: 32 V; Maximum Response Time: .00000012 s;