Vishay Intertechnology - BPW34

PIN PHOTODIODE; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Nominal Light Current: .042 mA; Maximum Dark Current: 1 nA; Size: 5 mm;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Semiconductor Material: Silicon; Maximum Reverse Voltage: 50 V; Maximum Operating Temperature: 55 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Nickel (Sn/Ni); Maximum Operating Temperature: 100 Cel; Minimum Reverse Breakdown Voltage: 20 V; Peak Wavelength (nm): 950;

Osram Opto Semiconductors' BPW34SR is a single PIN photodiode with peak wavelength of 850nm. It operates b/w -40 to 100°C, with max response time of 0.00000002s. Ideal for IR applications, it has a square shape and surface mount feature.

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 200 nA; Maximum Reverse Voltage: 45 V; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -30 Cel; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000001 s; Maximum Dark Current: 3 nA;

PN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Shape: RECTANGULAR; Nominal Light Current: .17 mA; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -30 Cel; Semiconductor Material: Silicon;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Packing Method: TR; Additional Features: LOW NOISE; Size: 1 mm;

Photo Diodes; Peak Wavelength (nm): 840; Size: 2.5 mm; Additional Features: HIGH RELIABILITY; Maximum Dark Current: .001 nA; Configuration: SEPARATE, 6 ELEMENTS;

Osram Opto Semiconductors' BPW34FSR18R is a single PIN photodiode with peak wavelength of 950nm. It operates b/w -40 to 100°C, has a min reverse breakdown voltage of 16V, and nominal light current of 0.04mA. Ideal for applications requiring infrared detection in compact spaces.

Photo Diodes; Maximum Dark Current: .001 nA; No. of Functions: 6; Configuration: SEPARATE, 6 ELEMENTS; Nominal Light Current: .008 mA; Size: 2.5 mm;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: Silicon; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; No. of Functions: 1;

PIN PHOTODIODE; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN NICKEL; Size: 1 mm; Infrared (IR) Range: YES; Maximum Operating Temperature: 100 Cel;

PIN PHOTODIODE; Maximum Dark Current: 30 nA; Maximum Operating Temperature: 85 Cel; Minimum Reverse Breakdown Voltage: 20 V; Peak Wavelength (nm): 1000; Infrared (IR) Range: YES;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAs; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 30 nA;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Maximum Response Time: .00000005 s; Configuration: SINGLE; Semiconductor Material: Silicon;