Osram Opto Semiconductors - BPW34FSR18R

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA; Semiconductor Material: Germanium;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 635; Infrared (IR) Range: NO; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE;

PIN PHOTODIODE; Minimum Reverse Breakdown Voltage: 20 V; Size: 1.3 mm; Peak Wavelength (nm): 1000; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 10 nA;

PIN PHOTODIODE; Terminal Finish: TIN LEAD; Configuration: SINGLE; Additional Features: DAYLIGHT FILTER; Nominal Light Current: .035 mA; Maximum Dark Current: 20 nA;

SFH2400FA by Infineon Technologies is a silicon photodiode with a max operating temperature of 100°C and a min operating temperature of -55°C. It has a max dark current of 1nA and a max response time of 5ns. This surface mount photodiode is commonly used in applications such as optical sensors and communication systems.

PIN PHOTODIODE; Nominal Light Current: .006 mA; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 5 nA; Maximum Operating Temperature: 100 Cel; Minimum Reverse Breakdown Voltage: 50 V;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 30 V;

Photo Diodes; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880; Size: 5 mm;

PIN PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Nominal Light Current: .04 mA; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE; Maximum Response Time: .00000002 s;

Photo Diodes;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Configuration: SINGLE; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Shape: ROUND;

TEMD5110X01 by Vishay Intertechnology is a single configuration photodiode with a peak wavelength of 940 nm. It operates at temperatures ranging from -40 to 100 °C and has a min reverse breakdown voltage of 60 V. This rectangular-shaped PIN photodiode is suitable for applications requiring infrared detection in surface mount installations.

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 443 nA; Configuration: COMPLEX; Additional Features: LOW NOISE; Maximum Operating Temperature: 85 Cel;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000005 s; Maximum Reverse Voltage: 10 V; Maximum Dark Current: 100 nA;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 180 V; Maximum Response Time: .000000005 s; Maximum Dark Current: 100 nA;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN OVER NICKEL; Maximum Dark Current: 5 nA; Nominal Light Current: .0036 mA; Peak Wavelength (nm): 900;

AVALANCHE PHOTODIODE; Maximum Dark Current: 720 nA; Shape: SQUARE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Configuration: COMPLEX;

Photo Diodes; Size: 5.9 mm; Nominal Light Current: .015 mA; Maximum Dark Current: 100 nA; Configuration: COMMON CATHODE, 2 ELEMENTS; Shape: ROUND;