Triquint Semiconductor - AG303-86G

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -25 Cel;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Temperature: -40 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 10 dBm;

QPL9547TR7 by Qorvo is a wide band low power RF amplifier with 17.5 dB gain, operating from 100 MHz to 6000 MHz. It has a max input power of 22 dBm and VSWR of 1.54, suitable for surface mount applications in RF & microwave systems requiring high performance amplification.

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Minimum Operating Temperature: -45 Cel;

NARROW BAND LOW POWER; Terminal Finish: TIN LEAD; Maximum Voltage Standing Wave Ratio: 1.65; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; JESD-609 Code: e0;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Power Supplies (V): 5;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; No. of Functions: 1; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 10 MHz; Characteristic Impedance: 50 ohm;

Analog Devices' HMC1040LP3CETR is a wide band low power RF amplifier with 17 dB gain, operating from 24-43.5 GHz. It has a max input power of 5 dBm and operates on a 2.5 V supply, making it ideal for high-frequency communication systems in various applications.

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 13 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Minimum Operating Frequency: 0 MHz;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 36; Package Body Material: PLASTIC/EPOXY; Technology: GAN; Gain: 26 dB;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Input Power (CW): 26 dBm; Gain: 14.7 dB; Minimum Operating Temperature: -40 Cel; Additional Features: HIGH RELIABILITY;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC16,.24SQ,40/32;

WIDE BAND MEDIUM POWER; Technology: GAAS; Construction: COMPONENT; Package Equivalence Code: DIE OR CHIP; Power Supplies (V): 6; JESD-609 Code: e3/e4;