M/a-com Technology Solutions - A33

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SL,4GW-LD,.085CIR; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 22 dB;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Frequency: 145 MHz; Construction: MODULE; Maximum Operating Temperature: 110 Cel;

CC2590RGVRG4 by Texas Instruments is a 16-terminal RF amplifier with a gain of 14.1 dB, operating b/w 2400-2483.5 MHz. It has a max input power of 10 dBm and is ideal for narrowband low-power applications in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Gain: 23 dB; No. of Functions: 1;

WIDE BAND LOW POWER;

Qorvo's RF6886SR is a wide band high power amplifier with 31 dB gain, operating from 433 MHz to 470 MHz. It has a max input power of 12 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in plastic/epoxy package.

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Temperature: 85 Cel;

WIDE BAND HIGH POWER; Characteristic Impedance: 50 ohm; Gain: 19 dB; Maximum Input Power (CW): 33 dBm; Maximum Operating Frequency: 2500 MHz; Construction: COMPONENT;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Construction: COMPONENT;

Analog Devices' HMC797LP5E is a wide band medium power RF amplifier with 11 dB gain and 23 dBm CW input power. Operating from -55 to 85°C, it covers frequencies from 0 to 22 GHz. With a VSWR of 7, this GaAs component is ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

Analog Devices' HMC903LP3ETR is a wide band low power RF amplifier with 18.5 dB gain, operating from 6-17 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, making it ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

WIDE BAND MEDIUM POWER; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 0 MHz; Maximum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Terminal Finish: Matte Tin (Sn);

WIDE BAND LOW POWER; Gain: 14.5 dB; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 700 MHz; Construction: COMPONENT;

WIDE BAND HIGH POWER;

WIDE BAND LOW POWER; Maximum Operating Temperature: 150 Cel; Construction: COMPONENT; Maximum Input Power (CW): 6 dBm; Maximum Operating Frequency: 6000 MHz; Gain: 13.6 dB;

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 7800 MHz; Maximum Operating Frequency: 8700 MHz; Maximum Operating Temperature: 85 Cel;