Toshiba - TPS704(F)

Photo Diodes; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: .001 nA; Shape: RECTANGULAR; Peak Wavelength (nm): 840; Infrared (IR) Range: YES;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000001 s; Semiconductor Material: Silicon; Infrared (IR) Range: YES; Peak Wavelength (nm): 960;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 48 V; Maximum Dark Current: 500 nA; Semiconductor Material: Germanium;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: TIN; Nominal Light Current: .037 mA; Maximum Operating Temperature: 85 Cel; Configuration: SINGLE;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Maximum Dark Current: 5 nA; Infrared (IR) Range: YES; Size: 1.53 mm; Minimum Reverse Breakdown Voltage: 40 V;

AVALANCHE PHOTODIODE; Minimum Reverse Breakdown Voltage: 24.2 V; Maximum Dark Current: 12000 nA; Maximum Operating Temperature: 85 Cel; No. of Functions: 1; Peak Wavelength (nm): 420;

AVALANCHE PHOTODIODE; Maximum Dark Current: 720 nA; Shape: SQUARE; Peak Wavelength (nm): 420; Minimum Reverse Breakdown Voltage: 24.2 V; Configuration: COMPLEX;

Photo Diodes; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Nominal Light Current: .0016 mA; Minimum Reverse Breakdown Voltage: 40 V; Minimum Operating Temperature: -40 Cel;

Photo Diodes;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 30 nA; Minimum Operating Temperature: -40 Cel;

AVALANCHE PHOTODIODE; Size: 3.07 mm; Configuration: COMPLEX; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: NO; Peak Wavelength (nm): 420;

PIN PHOTODIODE; Additional Features: SIDE VIEW; Configuration: SINGLE; Peak Wavelength (nm): 870; Nominal Light Current: .045 mA; Maximum Dark Current: 30 nA;

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Germanium; Maximum Operating Temperature: 85 Cel; Maximum Reverse Voltage: 48 V; Maximum Dark Current: 500 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 5 nA; Semiconductor Material: InGaAs; Maximum Reverse Voltage: 20 V; Maximum Response Time: .000000001 s;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; No. of Functions: 1; Minimum Operating Temperature: -55 Cel; Peak Wavelength (nm): 880; Size: 5 mm;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 920; Nominal Light Current: .17 mA; Infrared (IR) Range: YES;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Shape: RECTANGULAR; Maximum Reverse Voltage: 20 V; Minimum Operating Temperature: -40 Cel;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Size: 1.78 mm; Infrared (IR) Range: YES;