Infineon Technologies - BP104

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 2 nA; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Silicon; Maximum Response Time: .00000035 s;

Osram Opto Semiconductors' BPW34FAS-Z is a PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 16V. Sized at 2.65mm, it's ideal for infrared applications due to its low dark current and nominal light current of 0.023mA.

The Osram Opto Semiconductors BP104FS-Z is a single PIN photodiode with a peak wavelength of 950nm. It operates b/w -40°C to 100°C, with a min reverse breakdown voltage of 20V. Ideal for applications requiring infrared detection in a compact 2.2mm square configuration.

Photo Diodes;

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Maximum Operating Temperature: 85 Cel; JESD-609 Code: e3; Configuration: SINGLE; Size: 1.78 mm;

SFH203P by Infineon Technologies is a PIN photodiode with max response time of 5ns, reverse voltage of 50V, and operating temp range from -55°C to 100°C. Ideal for optoelectronic applications requiring fast and precise light detection in various environments.

PIN PHOTODIODE; Mounting Feature: RADIAL MOUNT; Configuration: SINGLE; Infrared (IR) Range: YES; Minimum Operating Temperature: -40 Cel; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Maximum Dark Current: 5 nA; Configuration: SINGLE; Maximum Reverse Voltage: 40 V;

AVALANCHE PHOTODIODE; Mounting Feature: SURFACE MOUNT; Infrared (IR) Range: NO; Minimum Reverse Breakdown Voltage: 24.25 V; Peak Wavelength (nm): 635; Maximum Dark Current: 146 nA;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 80 Cel; Maximum Dark Current: 2 nA; Semiconductor Material: Silicon;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel; No. of Functions: 1;

AVALANCHE PHOTODIODE;

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 70 Cel; Maximum Dark Current: 10 nA; Semiconductor Material: InGaAs;

PIN PHOTODIODE; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

PIN PHOTODIODE; Terminal Finish: TIN OVER NICKEL; Shape: SQUARE; JESD-609 Code: e3; Maximum Dark Current: 30 nA; Minimum Reverse Breakdown Voltage: 16 V;

Photo Diodes; Maximum Dark Current: .001 nA; No. of Functions: 6; Configuration: SEPARATE, 6 ELEMENTS; Nominal Light Current: .008 mA; Size: 2.5 mm;

PIN PHOTODIODE; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Reverse Breakdown Voltage: 32 V; Additional Features: DAYLIGHT FILTER; Shape: RECTANGULAR;

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .0000005 s; Maximum Reverse Voltage: 10 V; Maximum Operating Temperature: 80 Cel;

PIN PHOTODIODE; Minimum Operating Temperature: -20 Cel; Maximum Reverse Voltage: 32 V; Maximum Dark Current: 30 nA; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .00000005 s;

BPW34FASR18R by Osram Opto Semiconductors is a single PIN photodiode with peak wavelength of 880nm. It has a min reverse breakdown voltage of 16V and operates b/w -40°C to 100°C. Ideal for applications requiring infrared detection, it features a square shape and size of 2.65mm, with nominal light current of 0.023mA and max dark current of 30nA.