Texas Instruments - TIL622

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .1 A; Peak Wavelength (nm): 850; Minimum Operating Temperature: -40 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .05 A; Peak Wavelength (nm): 850;

PHOTO TRANSISTOR;

PHOTO TRANSISTOR; Infrared (IR) Range: YES; Size: 1.8 mm; No. of Functions: 1; Configuration: SINGLE; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum On State Current: .05 A; Peak Wavelength (nm): 890; Infrared (IR) Range: YES; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 830; Maximum Dark Current: 50 nA; Nominal Light Current: 9.6 mA; Maximum Response Time: .000009 s;

Photo Transistors; Mounting Feature: SURFACE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 950; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .13 W;

BPX81 by Infineon Technologies is an 850nm phototransistor with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max power dissipation of 0.09W and a max dark current of 200nA. This phototransistor is commonly used in applications requiring through hole mounting and can handle a max on-state current of 0.05A.

PHOTO TRANSISTOR; No. of Functions: 1; Shape: ROUND; Peak Wavelength (nm): 720; Configuration: SINGLE; Infrared (IR) Range: NO;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .05 W; Infrared (IR) Range: YES; Maximum Dark Current: 25 nA; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Peak Wavelength (nm): 850; Size: 3.9 mm; Infrared (IR) Range: YES; Nominal Light Current: 1.2 mA; Minimum Collector-emitter Breakdown Voltage: 70 V;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .07 W; Maximum Dark Current: 200 nA; Maximum Operating Temperature: 75 Cel; Peak Wavelength (nm): 880;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Dark Current: 200 nA; Peak Wavelength (nm): 860;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Terminal Finish: TIN; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum Operating Temperature: 100 Cel; Size: 2.4 mm; Shape: ROUND;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; JESD-609 Code: e3; Nominal Light Current: .63 mA; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Minimum Collector-emitter Breakdown Voltage: 70 V; Nominal Light Current: 7.5 mA; JESD-609 Code: e3;

Vishay Intertechnology's VEMT2520X01 is a 1.8mm phototransistor with peak wavelength of 850nm. Operating b/w -40°C to 100°C, it has a max power dissipation of 0.1W and nominal light current of 6mA. Ideal for applications requiring IR detection in compact setups using surface mount technology.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel;