Toshiba - 2SC2380

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 7 A; No. of Terminals: 2;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 350 MHz; Maximum Power Dissipation (Abs): 160 W; Maximum Collector Current (IC): 10 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 14 A; Package Style (Meter): FLANGE MOUNT;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): .9 A; Terminal Position: DUAL;

RF Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2; No. of Elements: 1;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.25 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Maximum Collector-Emitter Voltage: 18 V;

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; JESD-30 Code: R-CDFM-F2;

NPN; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 15 A; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS;

NPN; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER; Terminal Form: FLAT;

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 1.2 A; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1360 W; Maximum Collector Current (IC): 27 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .0011 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL;

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .0113 A; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: O-CRFM-F2;

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;

2N3866 by Microchip Technology is a NPN RF BJT with 1V VCEsat, 10dB Gp, and 800MHz fT. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND due to its 30V VCEO and 0.4A IC capabilities. The transistor's SILICON material and 3-terminal CYLINDRICAL package make it suitable for high-frequency amplification needs.

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 4.5 W; Maximum Collector Current (IC): .4 A; Terminal Position: RADIAL;