Texas Instruments - TRF37C73IDSGT

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 0 MHz; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Input Power (CW): 15 dBm;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Maximum Input Power (CW): 10 dBm; No. of Functions: 1; Maximum Voltage Standing Wave Ratio: 1.58;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: CERAMIC; Technology: GAAS; Maximum Supply Current: 95 mA;

WIDE BAND LOW POWER;

GRF2071 by Guerrilla Rf is a PHEMT technology RF amplifier with 18 dB gain, operating from 700 MHz to 2700 MHz. It has a max input power of 23 dBm and VSWR of 2, suitable for wideband low-power applications in RF & microwave systems. The component is surface-mountable and operates b/w -40°C to 105°C.

WIDE BAND LOW POWER; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT; Additional Features: HIGH RELIABILITY; Maximum Input Power (CW): 18 dBm;

WIDE BAND LOW POWER; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Maximum Input Power (CW): 10 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 5000 MHz;

Analog Devices' HMC797LP5E is a wide band medium power RF amplifier with 11 dB gain and 23 dBm CW input power. Operating from -55 to 85°C, it covers frequencies from 0 to 22 GHz. With a VSWR of 7, this GaAs component is ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.

Qorvo's QPA1010D is a GAN RF amplifier with 30 dBm CW input power, 23.1 dB gain, and 50 ohm impedance. Ideal for wideband high-power applications from 7900 MHz to 11000 MHz, it features a VSWR of 3 and operates on -1.9V to 24V supplies.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 3.3; Maximum Operating Temperature: 85 Cel;

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 700 MHz; Minimum Operating Temperature: -40 Cel; Characteristic Impedance: 50 ohm; JESD-609 Code: e3;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: CERAMIC; Technology: GAAS; Terminal Finish: GOLD OVER NICKEL;

WIDE BAND LOW POWER; Maximum Input Power (CW): 10 dBm; Construction: COMPONENT; JESD-609 Code: e4; Gain: 10 dB; Maximum Operating Frequency: 20000 MHz;

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Construction: COMPONENT;

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 2700 MHz; JESD-609 Code: e3;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Additional Features: HIGH RELIABILITY;

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 50 MHz; Gain: 10.5 dB; Maximum Input Power (CW): 20 dBm; Characteristic Impedance: 50 ohm; Construction: COMPONENT;

WIDE BAND HIGH POWER;