Texas Instruments - 2N5246

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Element Material: SILICON; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; No. of Terminals: 4; Minimum DS Breakdown Voltage: 150 V;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .31 W; JEDEC-95 Code: TO-226AA; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): NOT SPECIFIED; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-609 Code: e0; No. of Terminals: 3; Terminal Finish: TIN LEAD;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-PBCY-T3; Transistor Application: AMPLIFIER; JESD-609 Code: e0;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Terminal Finish: TIN;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; Case Connection: SOURCE; Maximum Operating Temperature: 175 Cel;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 30 V; Qualification: Not Qualified; No. of Terminals: 3;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): .05 A; Terminal Form: WIRE; Package Shape: ROUND;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING; Transistor Application: AMPLIFIER;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; JEDEC-95 Code: TO-72; Additional Features: LOW NOISE;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DUAL GATE, DEPLETION MODE; Maximum Feedback Capacitance (Crss): .045 pF;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Minimum DS Breakdown Voltage: 25 V; Maximum Operating Temperature: 150 Cel;

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;