NXP Semiconductors - BF556C-TAPE-7

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 15 V; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: JUNCTION; Minimum DS Breakdown Voltage: 30 V; Operating Mode: DEPLETION MODE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-30 Code: R-PDSO-G3; Terminal Form: GULL WING;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Style (Meter): SMALL OUTLINE; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Power Gain (Gp): 8 dB; Minimum DS Breakdown Voltage: 8 V; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: DUAL GATE, ENHANCEMENT MODE; JESD-30 Code: R-PDSO-G4; No. of Elements: 1;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 4;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Application: AMPLIFIER; Terminal Position: DUAL;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Transistor Element Material: SILICON; Maximum Drain Current (ID): 1 A;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Minimum Power Gain (Gp): 15 dB;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Package Shape: RECTANGULAR;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Highest Frequency Band: X BAND; Maximum Power Dissipation Ambient: .58 W;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Shape: RECTANGULAR;

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: TIN LEAD; Field Effect Transistor Technology: JUNCTION; JESD-30 Code: O-MBCY-W4;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Operating Mode: DEPLETION MODE; Terminal Form: THROUGH-HOLE;

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Qualification: Not Qualified;

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; JESD-30 Code: O-PBCY-T3; Package Shape: ROUND;

D2089UK by Tt Electronics Plc is an N-CHANNEL RF FET with 65V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring METAL-OXIDE SEMICONDUCTOR tech, it has 0.5pF Crss and GOLD finish terminals in a DISK BUTTON package.

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified;