Osram Opto Semiconductors - BPX84

PHOTO TRANSISTOR; Configuration: SINGLE; Shape: ROUND; Nominal Light Current: .01 mA; Infrared (IR) Range: NO; Minimum Collector-emitter Breakdown Voltage: 20 V;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Infrared (IR) Range: YES; Peak Wavelength (nm): 800; Nominal Light Current: .2 mA; Maximum On State Current: .05 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 850; JESD-609 Code: e0; Minimum Operating Temperature: -55 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Peak Wavelength (nm): 850; Maximum Power Dissipation: .07 W; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR; Minimum Operating Temperature: -30 Cel; Nominal Light Current: .017 mA; Shape: ROUND; Peak Wavelength (nm): 900; Maximum Operating Temperature: 85 Cel;

QSE213C by Fairchild Semiconductor is a single phototransistor with a peak wavelength of 880nm. It has a min operating temperature of -40°C and a max power dissipation of 0.1W. This optoelectronic component is commonly used in applications requiring infrared sensing or detection.

PHOTO DARLINGTON; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Dark Current: 250 nA;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 25 nA; Maximum Response Time: .000008 s; Peak Wavelength (nm): 900;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -65 Cel; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 50 V; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR; Size: 1.65 mm; No. of Functions: 1; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -25 Cel; Peak Wavelength (nm): 720;

SFH309FA-4 by Infineon Technologies is a phototransistor with a peak wavelength of 900nm. It can operate in temperatures ranging from -55°C to 100°C and has a max power dissipation of 0.165W. This through-hole mount device is commonly used in applications requiring fast response times and low dark current.

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 930; Maximum Power Dissipation: .05 W; Minimum Operating Temperature: -40 Cel; Maximum On State Current: .0001 A;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .1 W; Maximum On State Current: .025 A; Maximum Operating Temperature: 70 Cel;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .000008 s; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .05 W;

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 25 nA; Maximum Power Dissipation: .05 W; Minimum Operating Temperature: -40 Cel;

TEST2600 by Vishay Intertechnology is a single phototransistor with peak wavelength of 920nm. It operates b/w -40°C to 85°C, with max power dissipation of 0.1W. Ideal for applications requiring infrared detection and collector-emitter breakdown voltage of 70V in through hole mounting setups.

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Collector-emitter Breakdown Voltage: 35 V; Maximum On State Current: .015 A; Packing Method: TR, 13 INCH; Nominal Light Current: .65 mA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum Power Dissipation: .1 W; Infrared (IR) Range: YES; Nominal Light Current: 4.3 mA;

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Nominal Light Current: .07 mA; No. of Functions: 1; Shape: ROUND; Maximum Power Dissipation: .075 W;

PHOTO TRANSISTOR; No. of Functions: 1; Configuration: SINGLE; Additional Features: SIDE VIEW; Minimum Operating Temperature: -25 Cel; Size: 1.5 mm;