Solid State Devices - 2N3906

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.8 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 540 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NSM4002MR6T1G by Onsemi is a NPN BJT with hFE of 100, IC of 0.5A, and fT of 100MHz. Ideal for surface mount applications in electronics requiring high-speed signal amplification up to 150°C.

SMMBT4401LT1G by Onsemi is a NPN BJT transistor with 40V VCEO, 0.6A IC, and 250MHz fT. Ideal for switching applications, it comes in a small outline package with GULL WING terminals for surface mount assembly. Operating up to 150°C, it meets AEC-Q101 standards for automotive use.

SMBT2907AE6327HTSA1 by Infineon is a PNP BJT transistor with 3 terminals, suitable for switching applications. It has a max collector-emitter voltage of 60V, max collector current of 0.6A, and min DC current gain of 50. Ideal for small outline packages in high-speed switching circuits up to 200MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A;

MMBT5401LT1G by Onsemi is a PNP BJT transistor with 3 terminals, ideal for switching applications. It has a max collector-emitter voltage of 150V, max collector current of 0.5A, and min DC current gain of 50. With a package style of small outline and surface mount capability, it operates b/w -55 to 150 °C temperature range.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Power Dissipation Ambient: .5 W;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NXP Semiconductors' BC817-25,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.7V and hFE of 160, it operates at max 150°C with IC of 0.5A. Its small outline package makes it suitable for surface mount designs.