Samsung - M378A1K43CB2-CRC

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 260; Package Shape: RECTANGULAR; Maximum Seated Height: 30.13 mm; Memory Width: 64;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Access Mode: MULTI BANK PAGE BURST; Memory Width: 32;

Micron Technology's MT44K16M36RB-093:A is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Width: 9 mm;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

Micron Technology's EDB4432BBBJ-1DAIT-F is a PLASTIC/EPOXY DRAM with 128MX32 organization and 32-bit memory width. It operates synchronously, has self-refresh capability, and is suitable for industrial applications.

Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Technology: CMOS;

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SYNCHRONOUS GRAPHICS RAM; Temperature Grade: OTHER; No. of Terminals: 180; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.2125 V;

Micron Technology's MT53E512M32D1ZW-046WT:B is a LPDDR4 DRAM with 512MX32 organization, operating at up to 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

MT48LC16M16A2P-6AIT by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact package with common I/O type and self-refresh capability.

Micron Technology's MT53E256M32D2DS-053AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

LPDDR1 DRAM; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;

IS42S16160J-7TL by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 16777216 words. It operates at 3.3V, has a memory density of 268435456 bit, and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.