Micron Technology - MT44K16M36RB-093:A

DDR3L DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN SILVER COPPER;

Micron Technology's MT41K512M16HA-125AIT:ATR is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in harsh environments.

Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.

GDDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 100; Package Code: TQFP; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DDR3L DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;

Samsung's K4A4G165WF-BCTD is a 256MX16 DDR4 DRAM with 4294967296-bit memory density. Operating at 1.2V, it has a memory width of 16 and supports CMOS technology. Ideal for applications requiring high-speed data processing in devices like computers and servers due to its efficient organization and max operating temperature of 85°C.

MT47H64M16NF-25EIT:M by Micron Technology is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features 1.8V supply voltage, 84 terminals in a grid array package style, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

LPDDR2 DRAM; No. of Terminals: 134; Package Code: VFBGA; Package Shape: RECTANGULAR; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; Width: 10 mm;

DDR3 DRAM; No. of Terminals: 78; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

FAST PAGE DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 24; Package Code: TSOP2; Refresh Cycles: 2048; Package Shape: RECTANGULAR;

DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;

DDR3L DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MT48LC16M16A2P-7E by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a max clock frequency of 143 MHz and has an access time of 5.4 ns. This memory chip is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.

DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;

Micron Technology's MT48LC4M16A2P-6A:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a small outline package and offers common I/O type for applications requiring fast access times and high memory density.

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Maximum Supply Voltage (Vsup): 2 V;

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 8192; Package Shape: RECTANGULAR;