Renesas Electronics - NX7663JB-BC

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 405;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 790; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 875; Maximum Response Time: .0000000005 s; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaAs;

LASER DIODE; Peak Wavelength (nm): 1553; Minimum Operating Temperature: -20 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .01 A; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 780;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1576; Maximum Forward Voltage: 2.5 V; Maximum Operating Temperature: 70 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1300; Minimum Operating Temperature: -10 Cel; Maximum Forward Current: .15 A; Maximum Forward Voltage: 1.5 V;

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Semiconductor Material: InGaAs;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 790; Semiconductor Material: GaAlAs; JESD-609 Code: e0;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel; Maximum Forward Current: .085 A; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1553;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Size: 1.8 mm; No. of Functions: 1; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Shape: ROUND; Maximum Threshold Current: 55 mA; Configuration: SINGLE; No. of Functions: 1;

LASER DIODE; Peak Wavelength (nm): 650; Configuration: SINGLE WITH BUILT-IN PHOTO DIODE; No. of Functions: 1; Shape: ROUND; Nominal Output Power: 10 W;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 790;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: GaAlAs; Peak Wavelength (nm): 800; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Maximum Forward Current: .055 A; Peak Wavelength (nm): 635; Minimum Operating Temperature: -10 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .085 A; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 780; Maximum Operating Temperature: 50 Cel;

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 645; Maximum Operating Temperature: 40 Cel; Minimum Operating Temperature: -10 Cel; Semiconductor Material: AlGaInP;